SBRD81045T4G
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onsemi SBRD81045T4G

Manufacturer No:
SBRD81045T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 45V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SBRD81045T4G is a Schottky Barrier Rectifier produced by onsemi, designed for high-performance applications in power management. This device utilizes the Schottky Barrier principle in a large metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Average Rectified Forward Current (TC = 135°C) IF(AV) 10 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5) IFRM 20 A
Nonrepetitive Peak Surge Current IFSM 70 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 10 Amps, TJ = 125°C) VF 0.57 V
Thermal Resistance, Junction-to-Case RθJC 2.43 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 68 °C/W

Key Features

  • Guardring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature
  • Epoxy meets UL 94 V-0 @ 0.125 in
  • Short Heat Sink Tab Manufactured − Not Sheared
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant
  • Corrosion Resistant and Terminal Leads are Readily Solderable
  • ESD Ratings: Machine Model = C (> 400 V), Human Body Model = 3B (> 8000 V)

Applications

The SBRD81045T4G is suitable for various high-performance applications, including:

  • Low voltage, high frequency switching power supplies
  • Free wheeling diodes
  • Polarity protection diodes
  • Automotive and industrial power management systems

Q & A

  1. What is the peak repetitive reverse voltage of the SBRD81045T4G?

    The peak repetitive reverse voltage (VRRM) is 45 V.

  2. What is the average rectified forward current at TC = 135°C?

    The average rectified forward current (IF(AV)) is 10 A.

  3. What is the maximum instantaneous forward voltage at IF = 10 Amps and TJ = 125°C?

    The maximum instantaneous forward voltage (VF) is 0.57 V.

  4. What is the thermal resistance from junction-to-case?

    The thermal resistance from junction-to-case (RθJC) is 2.43 °C/W.

  5. Is the SBRD81045T4G RoHS compliant?
  6. What are the ESD ratings for this device?

    The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).

  7. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −65 to +175 °C.

  8. Is the SBRD81045T4G suitable for automotive applications?
  9. What is the nonrepetitive peak surge current rating?

    The nonrepetitive peak surge current (IFSM) is 70 A.

  10. What is the package type and shipping information for the SBRD81045T4G?

    The device is available in DPAK package with 2,500 units per tape and reel.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 45 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-65°C ~ 175°C
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