Overview
The SBAS16XV2T1G is a high-speed switching diode produced by onsemi. This diode is designed for high-speed switching applications and is packaged in the extremely small SOD-523 package, making it ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring stringent quality standards. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with modern environmental regulations.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Continuous Reverse Voltage | VR | 100 | V |
Continuous Forward Current | IF | 200 | mA |
Peak Forward Surge Current | IFM(surge) | 500 | mA |
Repetitive Peak Forward Current | IFRM | 500 | mA |
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) | IFSM | 4.0 A (t = 1 μs), 1.0 A (t = 1 ms), 0.5 A (t = 1 s) | A |
Forward Voltage (IF = 1.0 mA, 10 mA, 50 mA, 150 mA) | VF | 715 mV, 855 mV, 1000 mV, 1250 mV | mV |
Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 2.0 | pF |
Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) | trr | 6.0 | ns |
Thermal Resistance, Junction-to-Ambient | RθJA | 635 | °C/W |
Junction and Storage Temperature | TJ, Tstg | -55 to 150 | °C |
Key Features
- High-speed switching applications
- Lead finish: 100% Matte Sn (Tin)
- Qualified reflow temperature: 260°C
- Extremely small SOD-523 package
- AEC-Q101 qualified and PPAP capable for automotive and other stringent applications
- Pb-free, halogen-free/BFR-free, and RoHS compliant
- Low forward voltage and fast reverse recovery time
Applications
- High-speed switching circuits
- Automotive electronics requiring AEC-Q101 qualification
- General-purpose switching applications
- Consumer electronics where space is a constraint
- Industrial control systems
Q & A
- What is the continuous reverse voltage rating of the SBAS16XV2T1G diode?
The continuous reverse voltage rating is 100 V.
- What is the maximum continuous forward current for the SBAS16XV2T1G?
The maximum continuous forward current is 200 mA.
- What is the peak forward surge current for the SBAS16XV2T1G?
The peak forward surge current is 500 mA.
- Is the SBAS16XV2T1G diode RoHS compliant?
- What is the thermal resistance, junction-to-ambient, for the SBAS16XV2T1G?
The thermal resistance, junction-to-ambient, is 635 °C/W.
- What are the junction and storage temperature ranges for the SBAS16XV2T1G?
The junction and storage temperature ranges are -55 to 150 °C.
- What is the reverse recovery time for the SBAS16XV2T1G?
The reverse recovery time is 6.0 ns.
- Is the SBAS16XV2T1G suitable for automotive applications?
- What package type is used for the SBAS16XV2T1G?
The SBAS16XV2T1G is packaged in the SOD-523 package.
- What is the forward voltage at different current levels for the SBAS16XV2T1G?
The forward voltage is 715 mV at 1.0 mA, 855 mV at 10 mA, 1000 mV at 50 mA, and 1250 mV at 150 mA.