Overview
The PZTA42T1G is a high-voltage NPN silicon bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for general-purpose applications and is notable for its high voltage handling capabilities. It is packaged in a SOT-223 (TO-261-4, SC-73) surface mount package, making it suitable for a variety of modern electronic designs. The PZTA42T1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Collector-Emitter Voltage (Vce) | 300 | V |
| Collector-Base Voltage (Vcb) | 300 | V |
| Emitter-Base Voltage (Veb) | 6 | V |
| Collector Current (Ic) | 500 | mA |
| Total Power Dissipation (Pd) | 1.5 | W |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 0.5 | V |
| DC Current Gain (hFE) | 40 (min) | |
| Transition Frequency (ft) | 50 | MHz |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Storage Temperature Range (Tstg) | -65 to +150 | °C |
| Package Style | SOT-223 (TO-261-4, SC-73) | |
| Mounting Method | Surface Mount |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability.
- High breakdown voltage with a maximum collector-emitter voltage of 300 V.
- Low collector-emitter saturation voltage of 0.5 V.
- Complementary to PZTA92T1G.
Applications
The PZTA42T1G is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- General-purpose amplifiers: Its high voltage and current handling capabilities make it suitable for general-purpose amplifier circuits.
- Switching circuits: The transistor's high transition frequency and low saturation voltage make it suitable for switching applications.
- Industrial control systems: Its robustness and reliability make it a good choice for industrial control and automation systems.
Q & A
- What is the maximum collector-emitter voltage of the PZTA42T1G transistor?
The maximum collector-emitter voltage is 300 V.
- What is the package type of the PZTA42T1G transistor?
The transistor is packaged in a SOT-223 (TO-261-4, SC-73) surface mount package.
- Is the PZTA42T1G transistor RoHS compliant?
- What is the maximum collector current of the PZTA42T1G transistor?
The maximum collector current is 500 mA.
- What is the transition frequency of the PZTA42T1G transistor?
The transition frequency is 50 MHz.
- Is the PZTA42T1G transistor suitable for automotive applications?
- What is the maximum junction temperature of the PZTA42T1G transistor?
The maximum junction temperature is 150°C.
- What is the storage temperature range for the PZTA42T1G transistor?
The storage temperature range is -65 to +150°C.
- What is the DC current gain (hFE) of the PZTA42T1G transistor?
The DC current gain (hFE) is a minimum of 40.
- Is the PZTA42T1G transistor available in reel packaging?
