PZT2222AT1G
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onsemi PZT2222AT1G

Manufacturer No:
PZT2222AT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PZT2222AT1G is an NPN Silicon Planar Epitaxial Transistor produced by onsemi. This transistor is designed for use in both linear and switching applications. It is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc
Collector Current IC 600 mAdc
Total Power Dissipation (up to TA = 25°C) PD 1.5 W
Storage Temperature Range Tstg -65 to +150 °C
Junction Temperature Range TJ -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RJA 83.3 °C/W
Lead Temperature for Soldering TL 260 °C Sec

Key Features

  • PNP Complement: PZT2907AT1
  • SOT-223 package suitable for medium power surface mount applications
  • Package can be soldered using wave or reflow methods
  • Ensures level mounting, resulting in improved thermal conduction and allows visual inspection of soldered joints
  • Formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

The PZT2222AT1G transistor is versatile and can be used in a variety of applications, including:

  • Linear amplifiers
  • Switching circuits
  • Automotive systems
  • Industrial control systems
  • General-purpose amplification and switching

Q & A

  1. What is the maximum collector-emitter voltage of the PZT2222AT1G transistor?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the maximum collector current of the PZT2222AT1G transistor?

    The maximum collector current (IC) is 600 mA.

  3. What is the storage temperature range for the PZT2222AT1G transistor?

    The storage temperature range (Tstg) is -65°C to +150°C.

  4. Is the PZT2222AT1G transistor RoHS compliant?
  5. What package type is used for the PZT2222AT1G transistor?

    The transistor is housed in the SOT-223 package.

  6. Can the PZT2222AT1G transistor be used in automotive applications?
  7. What is the thermal resistance, junction-to-ambient for the PZT2222AT1G transistor?

    The thermal resistance, junction-to-ambient (RJA) is 83.3 °C/W.

  8. How can the SOT-223 package be soldered?

    The package can be soldered using either wave or reflow methods.

  9. What are the benefits of the formed leads in the SOT-223 package?

    The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.

  10. What is the PNP complement of the PZT2222AT1G transistor?

    The PNP complement is the PZT2907AT1 transistor.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:1.5 W
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223 (TO-261)
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Same Series
PZT2222AT3G
PZT2222AT3G
TRANS NPN 40V 0.6A SOT223
PZT2222AT1G
PZT2222AT1G
TRANS NPN 40V 0.6A SOT223

Similar Products

Part Number PZT2222AT1G PZT2222AT3G PZT2222AT1H PZT2222AT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA - 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V - 100 @ 150mA, 10V
Power - Max 1.5 W 1.5 W - 1.5 W
Frequency - Transition 300MHz 300MHz - 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) - SOT-223 (TO-261)

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