NTMFD2D4N03P8
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onsemi NTMFD2D4N03P8

Manufacturer No:
NTMFD2D4N03P8
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFD2D4N03P8 is a dual N-channel MOSFET produced by onsemi, designed with the PowerTrench Power Clip technology. This device is part of the asymmetric dual N-channel MOSFET family, offering enhanced performance and efficiency in various power management applications. The MOSFET is packaged in an 8-pin PQFN (Power Quad Flat No-Lead) package, which provides a compact and thermally efficient solution for modern electronic designs.

Key Specifications

Parameter Value Unit
Configuration Dual N-Channel -
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±12 V
ID (Continuous Drain Current) 3.5 A
RDS(ON) (On-Resistance) 12 mΩ Ω
PD (Power Dissipation) 1.5 W
Package Type 8-PQFN -

Key Features

  • PowerTrench Power Clip Technology: Enhances performance and reduces on-resistance, making it suitable for high-efficiency power management applications.
  • Asymmetric Dual N-Channel Configuration: Allows for flexible design options in various power management circuits.
  • Compact 8-PQFN Package: Provides a thermally efficient and space-saving solution for modern electronic designs.
  • Low On-Resistance (RDS(ON)): Minimizes power losses and improves overall system efficiency.
  • High Continuous Drain Current (ID): Supports high current applications with reliability.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and other power management circuits.
  • Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
  • Automotive Systems: Can be used in various automotive electronic systems requiring high reliability and efficiency.
  • Industrial Automation: Applicable in industrial automation systems where high performance and efficiency are critical.

Q & A

  1. What is the configuration of the NTMFD2D4N03P8 MOSFET?

    The NTMFD2D4N03P8 is a dual N-channel MOSFET.

  2. What is the maximum drain-source voltage (VDS) of the NTMFD2D4N03P8?

    The maximum drain-source voltage is 30 V.

  3. What is the typical on-resistance (RDS(ON)) of the NTMFD2D4N03P8?

    The typical on-resistance is 12 mΩ.

  4. What is the package type of the NTMFD2D4N03P8?

    The package type is 8-PQFN.

  5. What are some common applications of the NTMFD2D4N03P8?

    Common applications include power management, motor control, automotive systems, and industrial automation.

  6. What is the continuous drain current (ID) rating of the NTMFD2D4N03P8?

    The continuous drain current rating is 3.5 A.

  7. What technology is used in the NTMFD2D4N03P8 MOSFET?

    The NTMFD2D4N03P8 uses PowerTrench Power Clip technology.

  8. What is the maximum gate-source voltage (VGS) of the NTMFD2D4N03P8?

    The maximum gate-source voltage is ±12 V.

  9. What is the power dissipation (PD) of the NTMFD2D4N03P8?

    The power dissipation is 1.5 W.

  10. Why is the 8-PQFN package beneficial for the NTMFD2D4N03P8?

    The 8-PQFN package is beneficial due to its compact size and thermal efficiency, making it suitable for modern electronic designs.

Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs:5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V, 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1715pF @ 15V, 3825pF @ 15V
Power - Max:1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PQFN (5x6)
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