NSVBAT54HT1G
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onsemi NSVBAT54HT1G

Manufacturer No:
NSVBAT54HT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBAT54HT1G Schottky barrier diode, produced by onsemi, is designed for high-speed switching applications, circuit protection, and voltage clamping. This diode features an extremely low forward voltage, which reduces conduction loss and makes it ideal for handheld and portable applications where space is limited. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Reverse VoltageVR--30V
Forward Current (DC)IF--200mA
Non-Repetitive Peak Forward CurrentIFSM--600mA
Repetitive Peak Forward CurrentIFRM--300mA
Forward Voltage (IF = 10 mA)VF-0.350.52V
Reverse Recovery Timetrr--5.0ns
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)CT-7.610pF
Junction and Storage Temperature RangeTJ, Tstg-55-150°C
Thermal Resistance Junction-to-AmbientRJA--635°C/W

Key Features

  • Extremely fast switching speed, making it suitable for high-speed applications.
  • Low forward voltage of 0.35 V (typical) at IF = 10 mA, reducing conduction loss.
  • Miniature surface mount package (SOD-323) ideal for handheld and portable applications.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The NSVBAT54HT1G Schottky barrier diode is used in various applications including:

  • High-speed switching circuits.
  • Circuit protection and voltage clamping.
  • Handheld and portable devices where space is limited.
  • Automotive applications due to its AEC-Q101 qualification and PPAP capability.

Q & A

  1. What is the typical forward voltage of the NSVBAT54HT1G at 10 mA?
    The typical forward voltage is 0.35 V at IF = 10 mA.
  2. What is the maximum reverse voltage rating for the NSVBAT54HT1G?
    The maximum reverse voltage rating is 30 V.
  3. What is the package type of the NSVBAT54HT1G?
    The package type is SOD-323.
  4. Is the NSVBAT54HT1G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified and PPAP capable.
  5. What is the thermal resistance junction-to-ambient for the NSVBAT54HT1G?
    The thermal resistance junction-to-ambient is 635 °C/W.
  6. What is the maximum forward current rating for the NSVBAT54HT1G?
    The maximum forward current rating is 200 mA.
  7. What is the reverse recovery time of the NSVBAT54HT1G?
    The reverse recovery time is 5.0 ns.
  8. Is the NSVBAT54HT1G Pb-free and RoHS compliant?
    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  9. What is the total capacitance of the NSVBAT54HT1G at VR = 1.0 V and f = 1.0 MHz?
    The total capacitance is 7.6 to 10 pF.
  10. What are the typical applications of the NSVBAT54HT1G?
    Typical applications include high-speed switching circuits, circuit protection, voltage clamping, and automotive applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:800 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Capacitance @ Vr, F:10pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
NSVBAT54HT1G
NSVBAT54HT1G
DIODE SCHOTTKY 30V 200MA SOD323

Similar Products

Part Number NSVBAT54HT1G NSVBAT54WT1G NSVBAT54LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V 30 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 800 mV @ 100 mA 800 mV @ 100 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V 2 µA @ 25 V
Capacitance @ Vr, F 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOD-323 SC-70-3 (SOT323) SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 125°C -55°C ~ 125°C

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