NSM80100MT1G
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onsemi NSM80100MT1G

Manufacturer No:
NSM80100MT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 0.5A SC74
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSM80100MT1G is a PNP transistor with dual series switching diodes, manufactured by onsemi. This component is designed to be Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications that require high reliability and environmental compliance. The device is packaged in a SC-74 case, which is compact and suitable for various electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage (PNP Transistor) VCEO -80 Vdc
Collector-Base Voltage (PNP Transistor) VCBO -80 Vdc
Emitter-Base Voltage (PNP Transistor) VEBO -4.0 Vdc
Collector Current (Continuous) IC -500 mAdc
Reverse Voltage (Switching Diode) VR 100 V
Forward Current (Switching Diode) IF 200 mA
Non-Repetitive Peak Forward Current (Switching Diode) IFSM 20 A
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 400 mW
Thermal Resistance, Junction-to-Ambient RJA 313 °C/W
DC Current Gain (IC = -10 mA, VCE = -1.0 V) hFE 120
Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) VCE(sat) -0.25 V
Base-Emitter Saturation Voltage (IC = -100 mA, VCE = -1.0 V) VBE(sat) -1.2 V
Current-Gain - Bandwidth Product (IC = -100 mA, VCE = -2.0 V, f = 100 MHz) fT 150 MHz

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
  • High collector-emitter voltage (VCEO) of -80 Vdc, suitable for high voltage switching applications.
  • High current gain (hFE) of 120, providing efficient amplification and switching performance.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.25 V, minimizing power losses in saturation mode.
  • Low base-emitter saturation voltage (VBE(sat)) of -1.2 V, reducing power consumption.
  • High current-gain - bandwidth product (fT) of 150 MHz, suitable for high-speed switching applications.
  • Dual series switching diodes integrated into the package, enhancing functionality and reducing component count.
  • Wide operating temperature range from -55°C to +150°C, making it suitable for various environmental conditions.

Applications

  • LCD control boards: The NSM80100MT1G is suitable for driving LCD panels due to its high voltage and current handling capabilities.
  • High speed switching: The device's high current-gain - bandwidth product makes it ideal for high-speed switching applications.
  • High voltage switching: With a high collector-emitter voltage rating, this transistor is well-suited for applications requiring high voltage switching.
  • General purpose amplification and switching: Its balanced performance in terms of current gain, saturation voltages, and thermal characteristics makes it a versatile component for various electronic circuits.

Q & A

  1. What is the collector-emitter voltage rating of the NSM80100MT1G?

    The collector-emitter voltage (VCEO) rating is -80 Vdc.

  2. Is the NSM80100MT1G RoHS compliant?

    Yes, the NSM80100MT1G is Pb-free, halogen-free, and RoHS compliant.

  3. What is the maximum collector current for the NSM80100MT1G?

    The maximum continuous collector current (IC) is -500 mAdc.

  4. What is the reverse voltage rating of the integrated switching diode?

    The reverse voltage (VR) rating of the switching diode is 100 V.

  5. What is the current-gain - bandwidth product (fT) of the NSM80100MT1G?

    The current-gain - bandwidth product (fT) is 150 MHz.

  6. What is the operating temperature range of the NSM80100MT1G?

    The operating temperature range is from -55°C to +150°C.

  7. What are some typical applications of the NSM80100MT1G?

    Typical applications include LCD control boards, high speed switching, and high voltage switching.

  8. What is the thermal resistance from junction-to-ambient for the NSM80100MT1G?

    The thermal resistance from junction-to-ambient (RJA) is 313 °C/W for an FR-5 board at TA = 25°C.

  9. Does the NSM80100MT1G have integrated diodes?

    Yes, the NSM80100MT1G includes dual series switching diodes integrated into the package.

  10. What is the package type of the NSM80100MT1G?

    The NSM80100MT1G is packaged in a SC-74 case.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 1V
Power - Max:270 mW
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SC-74
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Similar Products

Part Number NSM80100MT1G NSM80101MT1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type PNP NPN + Diode (Isolated)
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 1V 120 @ 10mA, 1V
Power - Max 270 mW 400 mW
Frequency - Transition 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-74, SOT-457 SC-74, SOT-457
Supplier Device Package SC-74 SC-74

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