NRVUS360VBT3G
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onsemi NRVUS360VBT3G

Manufacturer No:
NRVUS360VBT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 3A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVUS360VBT3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes in surface mount applications. It features a compact SMB package with J-bend leads, making it ideal for systems where space and weight are critical.

The diode is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental and safety standards.

Key Specifications

Parameter Value Unit
Current 3A A
Mounting Type Surface Mount
Operating Temperature -65°C ~ 175°C °C
Package DO-214AA, SMB
Reverse Recovery Time (trr) 75 ns ns
Peak Repetitive Reverse Voltage (VRRM) 600 V V
Average Rectified Forward Current (IF(AV)) 3.0 A @ TL = 105°C A
Non-Repetitive Peak Surge Current (IFSM) 100 A A
Maximum Instantaneous Forward Voltage (VF) 1.25 V @ 3 A, TJ = 150°C V

Key Features

  • Compact Package: Small, surface mountable SMB package with J-bend leads, ideal for automated handling and compact system designs.
  • High Temperature Operation: High temperature glass passivated junction, operating within a temperature range of -65°C to 175°C.
  • Fast Recovery Time: Ultra-fast recovery time of 75 ns, making it suitable for high frequency applications.
  • High Voltage Capability: Peak repetitive reverse voltage of 600 V and non-repetitive peak surge current of 100 A.
  • Environmental Compliance: Pb-free and RoHS compliant, ensuring environmental safety and compliance with regulations.
  • Automotive Qualification: AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications).
  • Corrosion Resistant: All external surfaces are corrosion resistant, and terminal leads are readily solderable).

Applications

The NRVUS360VBT3G is ideally suited for a variety of applications, including:

  • High Voltage, High Frequency Rectification: Suitable for rectification in high voltage and high frequency systems).
  • Free-Wheeling and Protection Diodes: Used as free-wheeling diodes to protect against back EMF and as protection diodes in various circuits).
  • Automotive Systems: AEC-Q101 qualified, making it suitable for use in automotive systems where reliability and durability are critical).
  • Industrial and Power Supply Applications: Used in industrial power supplies, DC-DC converters, and other high-power electronic systems).

Q & A

  1. What is the maximum operating temperature of the NRVUS360VBT3G?

    The maximum operating temperature is 175°C, with an operating temperature range of -65°C to 175°C).

  2. What is the reverse recovery time of the NRVUS360VBT3G?

    The reverse recovery time (trr) is 75 ns).

  3. What is the peak repetitive reverse voltage (VRRM) of the NRVUS360VBT3G?

    The peak repetitive reverse voltage (VRRM) is 600 V).

  4. Is the NRVUS360VBT3G Pb-free and RoHS compliant?

    Yes, the NRVUS360VBT3G is Pb-free and RoHS compliant).

  5. What is the average rectified forward current (IF(AV)) of the NRVUS360VBT3G?

    The average rectified forward current (IF(AV)) is 3.0 A at a lead temperature (TL) of 105°C).

  6. What is the non-repetitive peak surge current (IFSM) of the NRVUS360VBT3G?

    The non-repetitive peak surge current (IFSM) is 100 A).

  7. What type of package does the NRVUS360VBT3G come in?

    The NRVUS360VBT3G comes in a DO-214AA, SMB package).

  8. Is the NRVUS360VBT3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications).

  9. What is the maximum instantaneous forward voltage (VF) of the NRVUS360VBT3G?

    The maximum instantaneous forward voltage (VF) is 1.25 V at 3 A and a junction temperature (TJ) of 150°C).

  10. What is the thermal resistance, junction-to-lead (RθJL) of the NRVUS360VBT3G?

    The thermal resistance, junction-to-lead (RθJL), is 14 °C/W).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:3 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number NRVUS360VBT3G NRVUS360VDBT3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 3 µA @ 600 V 3 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

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