SURS8360BT3G
  • Share:

onsemi SURS8360BT3G

Manufacturer No:
SURS8360BT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 3A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURS8360BT3G is a surface mount ultrafast power rectifier produced by onsemi. This component is ideally suited for high voltage, high frequency rectification, as well as for use as free-wheeling and protection diodes in applications where compact size and weight are critical. The SURS8360BT3G features a small, compact surface mountable package with J-bend leads, making it suitable for automated handling and integration into various electronic systems.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR 600 V
Average Rectified Forward Current IF(AV) 3.0 @ TL = 105°C A
Non-Repetitive Peak Surge Current IFSM 100 A
Operating Junction Temperature TJ -65 to +175 °C
Thermal Resistance, Junction-to-Lead RθJL 14 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 125 °C/W
Maximum Instantaneous Forward Voltage vF 0.83 (at iF = 3.0 A, TJ = 25°C) V
Maximum Reverse Recovery Time trr 75 ns (at iF = 1.0 A, di/dt = 50 A/μs) ns
ESD Rating (Human Body Model) HBM > 8 kV

Key Features

  • Small, compact surface mountable package with J-bend leads, ideal for automated handling.
  • Rectangular package for efficient mounting and integration.
  • High temperature glass passivated junction for enhanced reliability.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • High ESD rating: Human Body Model (HBM) > 8 kV and Machine Model (MM) > 400 V.

Applications

The SURS8360BT3G is versatile and can be used in a variety of applications, including:

  • High voltage, high frequency rectification.
  • Free-wheeling diodes in power supplies and motor control systems.
  • Protection diodes in electronic circuits requiring high reliability and compact size.
  • Automotive systems that require AEC-Q101 qualified components.
  • Industrial and consumer electronics where high performance and small footprint are essential.

Q & A

  1. What is the peak repetitive reverse voltage of the SURS8360BT3G?

    The peak repetitive reverse voltage (VRRM) is 600 V.

  2. What is the average rectified forward current rating of this component?

    The average rectified forward current (IF(AV)) is 3.0 A at a temperature of 105°C.

  3. What is the operating junction temperature range for the SURS8360BT3G?

    The operating junction temperature range is -65 to +175°C.

  4. Is the SURS8360BT3G Pb-free and RoHS compliant?
  5. What is the thermal resistance from junction to ambient for this component?

    The thermal resistance from junction to ambient (RθJA) is 125°C/W.

  6. What is the maximum instantaneous forward voltage at 3.0 A and 25°C?

    The maximum instantaneous forward voltage (vF) at 3.0 A and 25°C is 0.83 V.

  7. What is the ESD rating of the SURS8360BT3G according to the Human Body Model?

    The ESD rating according to the Human Body Model (HBM) is > 8 kV.

  8. Can the SURS8360BT3G be used in automotive applications?
  9. What is the non-repetitive peak surge current rating for this component?

    The non-repetitive peak surge current (IFSM) is 100 A.

  10. How should the terminal leads be soldered?

    The terminal leads are readily solderable, with a maximum lead and mounting surface temperature of 260°C for 10 seconds.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:30 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
579

Please send RFQ , we will respond immediately.

Same Series
NRVUS360VBT3G
NRVUS360VBT3G
DIODE GEN PURP 600V 3A SMB
SURS8360BT3G
SURS8360BT3G
DIODE GEN PURP 600V 3A SMB
NRVUS360VDBT3G
NRVUS360VDBT3G
DIODE GEN PURP 600V 3A SMB

Similar Products

Part Number SURS8360BT3G SURS8360T3G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 3A (DC) 3A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 3 A 1.25 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 30 µA @ 300 V 10 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AB, SMC
Supplier Device Package SMB SMC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC