NRVTSS3100ET3G-GA01
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onsemi NRVTSS3100ET3G-GA01

Manufacturer No:
NRVTSS3100ET3G-GA01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRENCH RECTIFIER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTSS3100ET3G-GA01 is a Trench Schottky Rectifier produced by onsemi, designed for high-efficiency and low-leakage applications. This device utilizes fine lithography trench-based Schottky technology, offering very low forward voltage and low leakage current. It is particularly suited for applications requiring fast switching, exceptional temperature stability, and high surge capability.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Average Rectified Forward Current (TL = 142°C) IF(AV) 3.0 A
Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 135°C) IFRM 6 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 90 A
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ -55 to +175 °C
ESD Rating (Human Body Model) 1B
Thermal Resistance, Junction-to-Lead, Steady State RθJL 17.5 °C/W
Thermal Resistance, Junction-to-Ambient, Steady State RθJA 90 °C/W
Instantaneous Forward Voltage (iF = 3.0 Amps, TJ = 25°C) vF 0.88 V
Reverse Current (Rated dc Voltage, TJ = 25°C) iR 0.9 μA
Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd 14.4 pF

Key Features

  • Fine Lithography Trench-based Schottky Technology for very low forward voltage and low leakage.
  • Fast switching with exceptional temperature stability.
  • Low power loss and lower operating temperature.
  • Higher efficiency for achieving regulatory compliance.
  • High surge capability.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other critical applications.
  • Pb-Free and Halide-Free devices.

Applications

  • Switching power supplies, including wireless, smartphone, and notebook adapters.
  • High frequency and DC-DC converters.
  • Freewheeling and OR-ing diodes.
  • Reverse battery protection.
  • Instrumentation.
  • LED lighting.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVTSS3100ET3G-GA01?

    The peak repetitive reverse voltage is 100 V.

  2. What is the average rectified forward current at TL = 142°C?

    The average rectified forward current is 3.0 A.

  3. What is the non-repetitive peak surge current rating?

    The non-repetitive peak surge current is 90 A.

  4. What is the operating junction temperature range?

    The operating junction temperature range is -55 to +175°C.

  5. Is the NRVTSS3100ET3G-GA01 Pb-Free and Halide-Free?
  6. What are the typical applications of the NRVTSS3100ET3G-GA01?

    Typical applications include switching power supplies, high frequency and DC-DC converters, freewheeling and OR-ing diodes, reverse battery protection, instrumentation, and LED lighting.

  7. What is the thermal resistance, junction-to-lead, steady state?

    The thermal resistance, junction-to-lead, steady state is 17.5°C/W.

  8. What is the instantaneous forward voltage at iF = 3.0 Amps and TJ = 25°C?

    The instantaneous forward voltage is 0.88 V.

  9. Is the NRVTSS3100ET3G-GA01 AEC-Q101 qualified?
  10. What is the diode capacitance at TJ = 25°C and f = 1 MHz?

    The diode capacitance is 14.4 pF.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:995 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:14.4pF @ 100V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-55°C ~ 175°C
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