NRVTS560EMFST1G
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onsemi NRVTS560EMFST1G

Manufacturer No:
NRVTS560EMFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 5A 60V 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVTS560EMFST1G is a high-performance Schottky rectifying diode produced by onsemi. This component is designed to offer exceptional efficiency and reliability in various power management and rectification applications. It features a trench-based structure, which enhances its switching characteristics and reduces power loss. The diode is packaged in a DFN-5 (5x6) SMD format, making it suitable for compact and high-density electronic designs.

Key Specifications

ParameterValue
Voltage Rating (V)60V
Current Rating (A)5A
Forward Voltage Drop (Vf) at 5A550mV
Package TypeDFN-5 (5x6) SMD
RoHS ComplianceYes

Key Features

  • Exceptionally low leakage current, contributing to higher efficiency and lower power loss.
  • Fast switching with exceptional temperature stability.
  • Trench-based structure for improved performance.
  • Low operating temperature due to reduced power loss.
  • Compact DFN-5 (5x6) SMD package for high-density designs.

Applications

  • Power supplies and DC-DC converters.
  • Rectification in high-frequency switching applications.
  • Automotive and industrial power systems.
  • Consumer electronics requiring high-efficiency power management.

Q & A

  1. What is the voltage rating of the NRVTS560EMFST1G? The voltage rating is 60V.
  2. What is the current rating of the NRVTS560EMFST1G? The current rating is 5A.
  3. What is the forward voltage drop at 5A for the NRVTS560EMFST1G? The forward voltage drop at 5A is 550mV.
  4. What package type is the NRVTS560EMFST1G available in? It is available in a DFN-5 (5x6) SMD package.
  5. Is the NRVTS560EMFST1G RoHS compliant? Yes, it is RoHS compliant.
  6. What are the key benefits of the trench-based structure in the NRVTS560EMFST1G? The trench-based structure provides fast switching, exceptional temperature stability, and lower power loss.
  7. In which applications is the NRVTS560EMFST1G commonly used? It is commonly used in power supplies, DC-DC converters, automotive and industrial power systems, and consumer electronics.
  8. How does the NRVTS560EMFST1G contribute to higher efficiency in power management? It contributes to higher efficiency through its exceptionally low leakage current and reduced power loss.
  9. What is the significance of the low operating temperature of the NRVTS560EMFST1G? The low operating temperature enhances the reliability and lifespan of the component.
  10. Is the NRVTS560EMFST1G suitable for high-density electronic designs? Yes, it is suitable due to its compact DFN-5 (5x6) SMD package.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:610 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:30 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
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Same Series
NRVTS560EMFST3G
NRVTS560EMFST3G
DIODE SCHOTTKY 60V 5A 5DFN

Similar Products

Part Number NRVTS560EMFST1G NRVTS560EMFST3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V
Current - Average Rectified (Io) 5A 5A
Voltage - Forward (Vf) (Max) @ If 610 mV @ 5 A 610 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 30 µA @ 60 V 30 µA @ 60 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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