NRVB2045EMFST3G
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onsemi NRVB2045EMFST3G

Manufacturer No:
NRVB2045EMFST3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 45V 20A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NRVB2045EMFST3G is a high-performance switch-mode power rectifier produced by onsemi. This device is part of the MBR2045EMFS series, designed to offer low power loss and high efficiency, making it suitable for various applications requiring reliable and efficient power rectification.

The NRVB prefix indicates that this device is AEC-Q101 qualified and PPAP capable, making it ideal for automotive and other applications that require unique site and control change requirements.

Key Specifications

Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 45 V
Working Peak Reverse Voltage VRWM 45 V
DC Blocking Voltage VR 45 V
Average Rectified Forward Current (Rated VR, TC = 130°C) IF(AV) 20 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 40 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ -55 to +150 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non-repetitive) EAS 150 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Thermal Resistance, Junction-to-Case, Steady State RθJC 1.6 °C/W
Thermal Resistance, Junction-to-Ambient, Steady State RθJA 45 °C/W
Instantaneous Forward Voltage (iF = 10 A, TJ = 125°C) VF 0.35 V
Instantaneous Reverse Current (Rated dc Voltage, TJ = 125°C) iR 48 mA

Key Features

  • Low Power Loss / High Efficiency: Optimized for minimal power loss and high efficiency in power rectification.
  • New Package Provides Capability of Inspection and Probe After Board Mounting: Allows for post-mount inspection and probing.
  • Guardring for Stress Protection: Enhances device reliability by protecting against stress.
  • Low Forward Voltage Drop: Reduces energy losses during operation.
  • 150°C Operating Junction Temperature: Suitable for high-temperature applications.
  • Wettable Flanks Option Available: Enhances solderability and reliability.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
  • Pb-Free and Halide-Free: Compliant with RoHS and other environmental regulations.

Applications

  • Output Rectification in Compact Portable Consumer Applications: Ideal for space-constrained consumer electronics.
  • Freewheeling Diode used with Inductive Loads: Suitable for applications involving inductive loads.
  • Excellent Alternative to DPAK in Space-Constrained Automotive Applications: A preferred choice for automotive designs where space is limited.

Q & A

  1. What is the peak repetitive reverse voltage of the NRVB2045EMFST3G?

    The peak repetitive reverse voltage (VRRM) is 45 V.

  2. What is the average rectified forward current rating of this device?

    The average rectified forward current (IF(AV)) is 20 A at a case temperature of 130°C.

  3. What is the operating junction temperature range of the NRVB2045EMFST3G?

    The operating junction temperature range is -55°C to +150°C.

  4. Is the NRVB2045EMFST3G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  5. What is the thermal resistance from junction to case (RθJC) of this device?

    The thermal resistance from junction to case (RθJC) is 1.6°C/W.

  6. What is the instantaneous forward voltage at 10 A and 125°C?

    The instantaneous forward voltage (VF) at 10 A and 125°C is 0.35 V.

  7. Is the NRVB2045EMFST3G Pb-Free and RoHS compliant?

    Yes, it is Pb-Free, Halide-Free, and RoHS compliant.

  8. What are the typical applications of the NRVB2045EMFST3G?

    Typical applications include output rectification in compact portable consumer applications, freewheeling diodes with inductive loads, and space-constrained automotive applications.

  9. What is the storage temperature range for this device?

    The storage temperature range is -65°C to +175°C.

  10. What is the non-repetitive peak surge current rating of the NRVB2045EMFST3G?

    The non-repetitive peak surge current (IFSM) is 400 A.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:640 mV @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:400 µA @ 45 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
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MBR2045EMFST1G
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Similar Products

Part Number NRVB2045EMFST3G NRVB2045EMFST1G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V
Current - Average Rectified (Io) 20A 20A
Voltage - Forward (Vf) (Max) @ If 640 mV @ 20 A 640 mV @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 400 µA @ 45 V 400 µA @ 45 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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