NRVB2045EMFST1G
  • Share:

onsemi NRVB2045EMFST1G

Manufacturer No:
NRVB2045EMFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 45V 20A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NRVB2045EMFST1G is a high-performance Schottky rectifier diode designed for various power management and conversion applications. This component is part of the NRVB2045EMFS product range and is known for its fast recovery characteristics and high current handling capability. It is packaged in an 8-PowerTDFN, 5-lead configuration, which is suitable for surface mount technology (SMT) assembly. The diode is qualified to the AEC-Q101 standard, making it reliable for automotive and other demanding environments.

Key Specifications

ParameterValue
ConfigurationSingle
Vf - Forward Voltage350 mV
Max Surge Current400 A
Ir - Reverse Current48 mA
Operating Temperature-55°C to 150°C
Package Type8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
QualificationAEC-Q101

Key Features

  • Fast recovery time, making it suitable for high-frequency applications.
  • High current handling capability of up to 20 A.
  • Low forward voltage drop of 350 mV, reducing power losses.
  • Wide operating temperature range from -55°C to 150°C.
  • AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
  • Compact 8-PowerTDFN package with 5 leads, ideal for SMT assembly.

Applications

The onsemi NRVB2045EMFST1G Schottky rectifier is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Automotive systems, such as battery charging and power management.
  • Industrial power management and control systems.
  • High-frequency switching circuits.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the maximum forward current of the NRVB2045EMFST1G?
    The maximum forward current is 20 A.
  2. What is the forward voltage drop of this diode?
    The forward voltage drop is 350 mV.
  3. What is the operating temperature range of the NRVB2045EMFST1G?
    The operating temperature range is -55°C to 150°C.
  4. Is the NRVB2045EMFST1G qualified for automotive use?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What type of package does the NRVB2045EMFST1G come in?
    The diode is packaged in an 8-PowerTDFN with 5 leads.
  6. What is the maximum surge current the diode can handle?
    The maximum surge current is 400 A.
  7. What is the reverse current of the NRVB2045EMFST1G?
    The reverse current is 48 mA.
  8. Is the NRVB2045EMFST1G suitable for high-frequency applications?
    Yes, it is suitable due to its fast recovery time.
  9. What type of mounting is used for the NRVB2045EMFST1G?
    The diode uses surface mount technology (SMT).
  10. Where can I find detailed specifications for the NRVB2045EMFST1G?
    Detailed specifications can be found in the technical datasheet available from onsemi or authorized distributors.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):45 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:640 mV @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:400 µA @ 45 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.64
146

Please send RFQ , we will respond immediately.

Same Series
MBR2045EMFST3G
MBR2045EMFST3G
DIODE SCHOTTKY 45V 20A 5DFN
NRVB2045EMFST3G
NRVB2045EMFST3G
DIODE SCHOTTKY 45V 20A 5DFN
MBR2045EMFST1G
MBR2045EMFST1G
DIODE SCHOTTKY 45V 20A 5DFN

Similar Products

Part Number NRVB2045EMFST1G NRVB2045EMFST3G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V
Current - Average Rectified (Io) 20A 20A
Voltage - Forward (Vf) (Max) @ If 640 mV @ 20 A 640 mV @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 400 µA @ 45 V 400 µA @ 45 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3

Related Product By Brand

NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC