Overview
The NJVMJD45H11RLG is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is designed for general-purpose power and switching applications, making it suitable for output or driver stages in various electronic circuits. It is packaged in a TO-252 3L (DPAK) format, which is ideal for surface-mount applications. Despite being discontinued, the datasheet provides valuable information for reference and legacy system maintenance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | -80 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -8 | A |
| Collector Current (Pulse) (ICP) | -16 | A |
| Collector Dissipation (TC = 25°C) (PC) | 20 | W |
| Collector Dissipation (TA = 25°C) | 1.75 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) | 60 (VCE = -1 V, IC = -2 A), 40 (VCE = -1 V, IC = -4 A) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -1 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | -1.5 | V |
| Current Gain Bandwidth Product (fT) | 40 | MHz |
| Collector Capacitance (Cob) | 230 | pF |
| Turn-On Time (tON) | 135 | ns |
| Storage Time (tSTG) | 500 | ns |
| Fall Time (tF) | 100 | ns |
Key Features
- General-purpose power and switching transistor suitable for output or driver stages.
- PNP epitaxial silicon transistor with fast switching speeds.
- Low collector-emitter saturation voltage (VCE(sat)) of -1 V.
- High DC current gain (hFE) of up to 60.
- TO-252 3L (DPAK) package for surface-mount applications.
- Lead-formed for surface mount application (no suffix).
Applications
The NJVMJD45H11RLG transistor is versatile and can be used in a variety of applications, including:
- Output or driver stages in electronic circuits.
- Power switching and amplification.
- Automotive and industrial control systems.
- Audio and power amplifiers.
- General-purpose switching and linear amplification.
Q & A
- What is the collector-emitter voltage rating of the NJVMJD45H11RLG transistor?
The collector-emitter voltage (VCEO) is rated at -80 V. - What is the maximum collector current for the NJVMJD45H11RLG transistor?
The maximum collector current (IC) is -8 A. - What is the package type of the NJVMJD45H11RLG transistor?
The transistor is packaged in a TO-252 3L (DPAK) format. - What is the junction temperature range for the NJVMJD45H11RLG transistor?
The junction temperature (TJ) range is up to 150°C. - What is the storage temperature range for the NJVMJD45H11RLG transistor?
The storage temperature range (TSTG) is -55 to +150°C. - What is the typical DC current gain (hFE) of the NJVMJD45H11RLG transistor?
The typical DC current gain (hFE) is 60 at VCE = -1 V and IC = -2 A. - What is the collector-emitter saturation voltage (VCE(sat)) of the NJVMJD45H11RLG transistor?
The collector-emitter saturation voltage (VCE(sat)) is -1 V. - What is the current gain bandwidth product (fT) of the NJVMJD45H11RLG transistor?
The current gain bandwidth product (fT) is 40 MHz. - What is the turn-on time (tON) of the NJVMJD45H11RLG transistor?
The turn-on time (tON) is 135 ns. - Is the NJVMJD45H11RLG transistor RoHS compliant?
Yes, the NJVMJD45H11RLG transistor is RoHS compliant.
