MURH860CTG
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onsemi MURH860CTG

Manufacturer No:
MURH860CTG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE ARRAY GP 600V 4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURH860CTG is a high-performance, ultrafast power rectifier diode manufactured by onsemi. This device is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a high operating junction temperature of up to 175°C and is packaged in the popular TO-220 format, making it suitable for a wide range of power management applications.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR 600 V
Average Rectified Forward Current (Rated VR, TC = 120°C) IF(AV) 4.0 / 8.0 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 120°C) IFM 16 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Thermal Resistance, Junction-to-Case RJC 3.0 °C/W
Maximum Instantaneous Forward Voltage (iF = 4.0 A, TC = 150°C / 25°C) vF 2.5 / 2.8 V
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs) trr 35 ns

Key Features

  • Ultrafast 35 nanosecond recovery times, making it ideal for high-frequency applications.
  • High operating junction temperature of up to 175°C, ensuring reliability in demanding environments.
  • Popular TO-220 package, which is widely used and easily integrated into various designs.
  • Epoxy meets UL 94 V-0 @ 0.125 in, ensuring high safety standards.
  • High temperature glass passivated junction for enhanced durability.
  • High voltage capability up to 600 V, suitable for high-power applications.
  • Low leakage specified @ 150°C case temperature, minimizing energy loss.
  • Current derating at both case and ambient temperatures to ensure safe operation.
  • Pb-free devices, compliant with RoHS standards.

Applications

  • Switching power supplies: The MURH860CTG is optimized for use in switching power supplies due to its ultrafast recovery times and high voltage capability.
  • Inverters: Its high operating junction temperature and low leakage current make it suitable for inverter applications.
  • Free-wheeling diodes: The device's fast recovery time and high current handling capabilities make it an excellent choice as a free-wheeling diode.

Q & A

  1. What is the peak repetitive reverse voltage of the MURH860CTG?

    The peak repetitive reverse voltage (VRRM) of the MURH860CTG is 600 V.

  2. What is the maximum operating junction temperature of the MURH860CTG?

    The maximum operating junction temperature is 175°C.

  3. What is the average rectified forward current rating of the MURH860CTG?

    The average rectified forward current (IF(AV)) is rated at 4.0 A (total device) at TC = 120°C.

  4. What is the recovery time of the MURH860CTG?

    The maximum reverse recovery time (trr) is 35 nanoseconds.

  5. Is the MURH860CTG Pb-free and RoHS compliant?
  6. What is the package type of the MURH860CTG?

    The MURH860CTG is packaged in the TO-220 format.

  7. What are the typical applications of the MURH860CTG?

    The MURH860CTG is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  8. What is the maximum thermal resistance, junction-to-case of the MURH860CTG?

    The maximum thermal resistance, junction-to-case (RJC) is 3.0 °C/W.

  9. What is the maximum instantaneous forward voltage of the MURH860CTG?

    The maximum instantaneous forward voltage (vF) is 2.5 V at TC = 150°C and 2.8 V at TC = 25°C.

  10. Does the MURH860CTG meet any specific safety standards?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io) (per Diode):4A
Voltage - Forward (Vf) (Max) @ If:2.8 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
MURH860CT
MURH860CT
DIODE ARRAY GP 600V 4A TO220AB

Similar Products

Part Number MURH860CTG MURHF860CTG MURHB860CTG MURH860CTH MURH840CTG MURH860CT
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 400 V 600 V
Current - Average Rectified (Io) (per Diode) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 2.8 V @ 4 A 2.8 V @ 4 A 2.8 V @ 4 A 2.8 V @ 4 A 2.2 V @ 4 A 2.8 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 28 ns 35 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 400 V 10 µA @ 600 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 Full Pack TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220FP D²PAK TO-220 TO-220 TO-220

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