MURD620CT1
  • Share:

onsemi MURD620CT1

Manufacturer No:
MURD620CT1
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE ARRAY GP 200V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURD620CT1 is a state-of-the-art ultrafast recovery rectifier designed and manufactured by onsemi. This device is part of the MUR series and is optimized for high-performance applications in switching power supplies, inverters, and as free-wheeling diodes. The MURD620CT1 is known for its ultrafast recovery times, high voltage capability, and high operating junction temperature, making it a reliable choice for demanding power management systems.

Key Specifications

Parameter Symbol Test Conditions Min. Max. Units
Peak Repetitive Reverse Voltage VRRM 200 V
Average Rectified Forward Current per Device IF(AV) Total device, rated VR, TC = 146 °C 6 A
Non-repetitive Peak Surge Current IFSM 50 A
Peak Repetitive Forward Current per Diode IFM Rated VR, square wave, 20 kHz, TC = 146 °C 6 A
Operating Junction and Storage Temperatures TJ, TStg -65 175 °C
Forward Voltage VF IF = 3 A 0.9 1.0 V
Reverse Leakage Current IR VR = VR rated 5 μA
Junction Capacitance CT VR = 200 V 12 pF
Reverse Recovery Time trr TJ = 25 °C 35 60 ns
Thermal Resistance, Junction to Case per Leg RthJC 9.0 °C/W
Thermal Resistance, Junction to Ambient per Leg RthJA 80 °C/W

Key Features

  • Ultrafast recovery times of 35 and 60 nanoseconds, ensuring minimal switching losses.
  • High operating junction temperature of up to 175°C, suitable for demanding thermal environments.
  • High voltage capability up to 200 V, making it versatile for various power supply applications.
  • Low leakage current specified at high temperatures, reducing standby power consumption.
  • Current derating at both case and ambient temperatures to ensure reliable operation.
  • Pb-free and RoHS-compliant, meeting environmental standards.
  • High temperature glass passivated junction for enhanced reliability.
  • Corrosion-resistant finish and readily solderable terminal leads.

Applications

  • Switching power supplies: Ideal for high-frequency switching applications due to its ultrafast recovery times.
  • Inverters: Suitable for inverter circuits that require fast switching and low losses.
  • Free-wheeling diodes: Used in applications where fast recovery is crucial to minimize losses and improve efficiency.
  • Power management systems: Applicable in various power management circuits requiring high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the MURD620CT1?

    The peak repetitive reverse voltage (VRRM) of the MURD620CT1 is 200 V.

  2. What is the average rectified forward current per device for the MURD620CT1?

    The average rectified forward current per device (IF(AV)) is 6 A at a case temperature of 146 °C.

  3. What are the operating junction and storage temperatures for the MURD620CT1?

    The operating junction and storage temperatures range from -65 °C to 175 °C.

  4. What is the typical forward voltage of the MURD620CT1 at 3 A?

    The typical forward voltage (VF) at 3 A is 0.9 V.

  5. What is the reverse recovery time of the MURD620CT1?

    The reverse recovery time (trr) is between 35 and 60 nanoseconds.

  6. Is the MURD620CT1 Pb-free and RoHS-compliant?

    Yes, the MURD620CT1 is Pb-free and RoHS-compliant.

  7. What is the thermal resistance from junction to case per leg for the MURD620CT1?

    The thermal resistance from junction to case per leg (RthJC) is 9.0 °C/W.

  8. What are the typical applications of the MURD620CT1?

    The MURD620CT1 is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  9. What is the junction capacitance of the MURD620CT1 at 200 V?

    The junction capacitance (CT) at 200 V is 12 pF.

  10. What is the maximum non-repetitive peak surge current for the MURD620CT1?

    The maximum non-repetitive peak surge current (IFSM) is 50 A.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
555

Please send RFQ , we will respond immediately.

Same Series
MURD620CTT4G
MURD620CTT4G
DIODE ARRAY GP 200V 3A DPAK
MURD620CTG
MURD620CTG
DIODE ARRAY GP 200V 3A DPAK
SNRVUD620CTT4G
SNRVUD620CTT4G
DIODE ARRAY GP 200V 3A DPAK
NRVUD620CTG-VF01
NRVUD620CTG-VF01
DIODE ARRAY GP 200V 3A DPAK

Similar Products

Part Number MURD620CT1 MURD620CTG MURD620CTH MURD620CT
Manufacturer onsemi onsemi onsemi Vishay General Semiconductor - Diodes Division
Product Status Obsolete Last Time Buy Obsolete Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 6A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.2 V @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK D-PAK (TO-252AA)

Related Product By Categories

PMEG4010CPA,115
PMEG4010CPA,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V 3HUSON
BAS40AW_R1_00001
BAS40AW_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
NSR30CM3T5G
NSR30CM3T5G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT723
STPS61170CW
STPS61170CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO247
STPS10170CB-TR
STPS10170CB-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
STTH16L06CG-TR
STTH16L06CG-TR
STMicroelectronics
DIODE ARRAY GP 600V 10A D2PAK
BAT54RTB_R1_00001
BAT54RTB_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
1N4148UBCCC
1N4148UBCCC
Microchip Technology
SIGNAL OR COMPUTER DIODE
MBR2545CT-1
MBR2545CT-1
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO262
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN