MURD620CTT4G
  • Share:

onsemi MURD620CTT4G

Manufacturer No:
MURD620CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURD620CTT4G is an ultrafast rectifier produced by onsemi, designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the MURD620CT series, which includes variants such as NRVUD620CT, SRVUD620CT, and SNRVUD620CT. The MURD620CTT4G is packaged in a DPAK (TO-252) surface mount package, making it suitable for a variety of high-frequency applications.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Average Rectified Forward Current (TC = 140°C) IF(AV) 6.0 A
Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 145°C) IF 6.0 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) IFSM 50 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage Drop (iF = 6 Amps, TC = 25°C) vF 1.2 V
Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/μs, VR = 30 V, TJ = 25°C) trr 35 ns
Thermal Resistance, Junction-to-Case RθJC 9 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W
Package Type DPAK (TO-252)
Weight Approximately 0.4 gram
Lead and Mounting Surface Temperature for Soldering Purposes 260°C Max. for 10 Seconds

Key Features

  • Ultrafast Recovery Time: 35 nanoseconds, making it suitable for high-frequency applications.
  • Low Forward Voltage Drop: Ensures minimal power loss during operation.
  • Low Leakage: Reduces standby power consumption.
  • ESD Rating: Human Body Model > 8 kV, Machine Model > 400 V.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Corrosion Resistant and Solderable Leads: Enhances durability and ease of assembly.

Applications

  • Switching Power Supplies: Ideal for use in high-efficiency power supply designs.
  • Inverters: Suitable for inverter applications requiring fast switching times.
  • Free-Wheeling Diodes: Used in various power conversion circuits to protect against backflow of current.
  • Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.

Q & A

  1. What is the peak repetitive reverse voltage of the MURD620CTT4G?

    200 V.

  2. What is the average rectified forward current rating of the MURD620CTT4G?

    6.0 A at TC = 140°C.

  3. What is the maximum reverse recovery time of the MURD620CTT4G?

    35 ns.

  4. Is the MURD620CTT4G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  5. What is the thermal resistance, junction-to-case of the MURD620CTT4G?

    9 °C/W.

  6. What is the package type of the MURD620CTT4G?

    DPAK (TO-252).

  7. Is the MURD620CTT4G Pb-Free and RoHS compliant?

    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  8. What are the typical applications of the MURD620CTT4G?

    Switching power supplies, inverters, free-wheeling diodes, and automotive systems.

  9. What is the maximum instantaneous forward voltage drop of the MURD620CTT4G?

    1.2 V at iF = 6 Amps, TC = 25°C.

  10. What is the non-repetitive peak surge current rating of the MURD620CTT4G?

    50 A.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.64
1,361

Please send RFQ , we will respond immediately.

Same Series
MURD620CTT4G
MURD620CTT4G
DIODE ARRAY GP 200V 3A DPAK
MURD620CTG
MURD620CTG
DIODE ARRAY GP 200V 3A DPAK
SNRVUD620CTT4G
SNRVUD620CTT4G
DIODE ARRAY GP 200V 3A DPAK
NRVUD620CTG-VF01
NRVUD620CTG-VF01
DIODE ARRAY GP 200V 3A DPAK

Related Product By Categories

BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
BAS56,215
BAS56,215
Nexperia USA Inc.
DIODE ARRAY GP 60V 200MA SOT143B
BAV99S-AU_R1_000A1
BAV99S-AU_R1_000A1
Panjit International Inc.
SOT-363, SWITCHING
STPS3045CP
STPS3045CP
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V SOT93
BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK
BAV74_D87Z
BAV74_D87Z
onsemi
DIODE ARRAY GP 50V 200MA SOT23-3
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BYV32EB-200PJ
BYV32EB-200PJ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP