MUR4100EG
  • Share:

onsemi MUR4100EG

Manufacturer No:
MUR4100EG
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 1000V 4A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR4100EG is a high-performance ultrafast rectifier from onsemi, designed for use in switching power supplies, inverters, and as free-wheeling diodes. This device is part of the 'E' series, known for its ultrafast recovery time and high reverse energy capability. It is built with a high temperature glass passivated junction and is lead-free, making it suitable for a variety of demanding applications.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM1000V
Working Peak Reverse VoltageVRWM1000V
DC Blocking VoltageVR1000V
Average Rectified Forward Current (Square Wave; Mounting Method #3)IF(AV)4.0 @ TA = 35°CA
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM70A
Operating Junction and Storage Temperature RangeTJ, Tstg−65 to +175 °C°C
Maximum Instantaneous Forward Voltage (iF = 3.0 A, TJ = 25°C)vF1.75V
Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/μs)trr75 nsns
Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/μs)tfr75 nsns
Controlled Avalanche EnergyWAVAL20 mJmJ

Key Features

  • Ultrafast 75 nanosecond recovery time
  • Excellent protection against voltage transients in switching inductive load circuits
  • High reverse energy capability with 20 mJ avalanche energy guaranteed
  • Low forward voltage and low leakage current
  • High temperature glass passivated junction with an operating junction temperature up to 175°C
  • Lead-free and corrosion-resistant epoxy molded case
  • Readily solderable terminal leads

Applications

The MUR4100EG is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes in inductive load circuits
  • High-frequency switching circuits where fast recovery times are critical

Q & A

  1. What is the peak repetitive reverse voltage of the MUR4100EG?
    The peak repetitive reverse voltage (VRRM) of the MUR4100EG is 1000 V.
  2. What is the average rectified forward current rating for the MUR4100EG?
    The average rectified forward current (IF(AV)) is 4.0 A at a temperature of 35°C.
  3. What is the maximum operating junction temperature for the MUR4100EG?
    The maximum operating junction temperature (TJ) is 175°C.
  4. What is the recovery time of the MUR4100EG?
    The maximum reverse recovery time (trr) is 75 ns.
  5. Is the MUR4100EG lead-free?
    Yes, the MUR4100EG is a lead-free device.
  6. What is the controlled avalanche energy of the MUR4100EG?
    The controlled avalanche energy (WAVAL) is 20 mJ.
  7. What are the typical applications of the MUR4100EG?
    The MUR4100EG is typically used in switching power supplies, inverters, and as free-wheeling diodes.
  8. What is the maximum instantaneous forward voltage of the MUR4100EG?
    The maximum instantaneous forward voltage (vF) at 3.0 A and 25°C is 1.75 V.
  9. How is the MUR4100EG packaged?
    The MUR4100EG is available in axial lead packages, including bulk and tape and reel options.
  10. What is the maximum non-repetitive peak surge current for the MUR4100EG?
    The non-repetitive peak surge current (IFSM) is 70 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.97
71

Please send RFQ , we will respond immediately.

Same Series
MUR480ESG
MUR480ESG
DIODE GEN PURP 800V 4A DO201AD
MUR480ERLG
MUR480ERLG
DIODE GEN PURP 800V 4A AXIAL
MUR4100ERLG
MUR4100ERLG
DIODE GEN PURP 1000V 4A DO201AD
MUR480E
MUR480E
DIODE GEN PURP 800V 4A DO201AD
MUR4100ERL
MUR4100ERL
DIODE GEN PURP 1KV 4A DO201AD
MUR480EG
MUR480EG
DIODE GEN PURP 800V 4A AXIAL

Similar Products

Part Number MUR4100EG MUR2100EG MUR4100E
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 4A 2A 4A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 4 A 2.2 V @ 2 A 1.85 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V 10 µA @ 1000 V 25 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-204AL, DO-41, Axial DO-201AA, DO-27, Axial
Supplier Device Package Axial Axial Axial
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC