MUR2020RG
  • Share:

onsemi MUR2020RG

Manufacturer No:
MUR2020RG
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 200V 20A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR2020RG is a high-efficiency, fast recovery rectifier diode produced by onsemi. This diode is designed for high-current applications and features a robust set of specifications that make it suitable for a variety of power management and rectification tasks. With its through-hole TO-220-2 package, it is easy to integrate into existing designs and provides reliable performance over a wide temperature range.

Key Specifications

ParameterValue
Current - Average Rectified (Io)20 A
Voltage - Forward (Vf) (Max) @ If1.1 V @ 20 A
Reverse Leakage Current (Ir)50 uA @ 200 V
Maximum Surge Current250 A
Reverse Recovery Time (trr)< 500 ns, > 200 mA (Io)
Operating Temperature-65°C to +175°C
PackageThrough Hole TO-220-2

Key Features

  • Fast recovery time of less than 500 ns, ensuring minimal switching losses.
  • High average rectified current of 20 A, making it suitable for high-power applications.
  • Low forward voltage drop of 1.1 V at 20 A, enhancing efficiency.
  • Low reverse leakage current of 50 uA at 200 V, reducing standby power consumption.
  • Wide operating temperature range from -65°C to +175°C, ensuring reliability in various environments.

Applications

The MUR2020RG diode is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Rectification and filtering in industrial and automotive systems.

Q & A

  1. What is the maximum average rectified current of the MUR2020RG diode? The maximum average rectified current is 20 A.
  2. What is the forward voltage drop at 20 A? The forward voltage drop is 1.1 V at 20 A.
  3. What is the reverse recovery time of the MUR2020RG? The reverse recovery time is less than 500 ns.
  4. What is the operating temperature range of the MUR2020RG? The operating temperature range is from -65°C to +175°C.
  5. What is the package type of the MUR2020RG? The package type is Through Hole TO-220-2.
  6. What is the maximum surge current the MUR2020RG can handle? The maximum surge current is 250 A.
  7. What is the reverse leakage current at 200 V? The reverse leakage current is 50 uA at 200 V.
  8. In what types of applications is the MUR2020RG commonly used? It is commonly used in power supplies, motor control systems, high-frequency switching circuits, and rectification in industrial and automotive systems.
  9. Why is the fast recovery time of the MUR2020RG important? The fast recovery time reduces switching losses and improves overall system efficiency.
  10. How does the low forward voltage drop benefit the system? The low forward voltage drop enhances the efficiency of the system by reducing power losses.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):95 ns
Current - Reverse Leakage @ Vr:50 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$2.15
458

Please send RFQ , we will respond immediately.

Similar Products

Part Number MUR2020RG MUR2020R
Manufacturer onsemi onsemi
Product Status Active Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 20A 20A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 20 A 1.1 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 95 ns 95 ns
Current - Reverse Leakage @ Vr 50 µA @ 200 V 50 µA @ 200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB