MMBT3906LT1H
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onsemi MMBT3906LT1H

Manufacturer No:
MMBT3906LT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 200MA BIPO SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3906LT1H is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. It is designed for low power surface mount applications and is housed in the SOT-23 package. This transistor is suitable for various electronic circuits, including amplifier and switching applications. It is also qualified to AEC-Q101 standards, making it reliable for automotive and other demanding environments.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage VCEO -40 -40 Vdc
Collector-Base Voltage VCBO -40 -40 Vdc
Emitter-Base Voltage VEBO -5.0 -5.0 Vdc
Continuous Collector Current IC -200 -200 mAdc
Peak Collector Current ICM -800 -800 mAdc
DC Current Gain (hFE) hFE 100 400 -
Delay Time td -35 -35 ns
Rise Time tr -35 -35 ns
Storage Time ts -225 -225 ns
Fall Time tf -75 -75 ns
Junction and Storage Temperature TJ, Tstg -65 to +150 -65 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 417 417 °C/W

Key Features

  • PNP bipolar junction transistor in SOT-23 package, suitable for low power surface mount applications.
  • Qualified to AEC-Q101 standards for high reliability in automotive and other demanding environments.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Ideal for medium power amplification and switching applications.
  • Epitaxial planar die construction for improved performance.
  • Molded plastic case with UL flammability classification rating 94V-0.
  • Matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

  • General purpose amplifier applications.
  • Switching circuits.
  • Automotive electronics due to AEC-Q101 qualification.
  • Consumer electronics requiring reliable and efficient transistor performance.
  • Industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the MMBT3906LT1H transistor?

    The collector-emitter voltage rating is -40 Vdc.

  2. What is the continuous collector current rating of the MMBT3906LT1H transistor?

    The continuous collector current rating is -200 mAdc.

  3. Is the MMBT3906LT1H transistor RoHS compliant?
  4. What is the thermal resistance from junction to ambient for the MMBT3906LT1H transistor?

    The thermal resistance from junction to ambient is 417 °C/W.

  5. What are the typical delay, rise, storage, and fall times for the MMBT3906LT1H transistor?

    The typical delay time is 35 ns, rise time is 35 ns, storage time is 225 ns, and fall time is 75 ns.

  6. What is the DC current gain (hFE) range for the MMBT3906LT1H transistor?

    The DC current gain (hFE) range is from 100 to 400.

  7. Is the MMBT3906LT1H transistor suitable for automotive applications?
  8. What is the package type of the MMBT3906LT1H transistor?

    The package type is SOT-23.

  9. What are the moisture sensitivity and flammability ratings of the MMBT3906LT1H transistor?

    The moisture sensitivity is Level 1 per J-STD-020, and the flammability rating is UL 94V-0.

  10. What is the weight of the MMBT3906LT1H transistor?

    The approximate weight is 0.008 grams.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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