Overview
The MMBT2222A is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for use in a variety of applications, including medium power amplification and switching. The transistor features an epitaxial planar die construction and is packaged in a SOT-23 case, making it suitable for compact and efficient designs. It is also lead-free and fully RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | - | Vdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 75 | - | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5.0 | 6.0 | Vdc |
| Collector Current | IC | - | 1.0 | A |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C |
| Total Device Dissipation | PD | - | 350 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | 357 | °C/W |
| DC Current Gain (hFE) at IC = 10 mA, VCE = 10 Vdc | hFE | 75 | - | - |
| Collector-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VCE(sat) | - | 0.4 | Vdc |
| Base-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VBE(sat) | - | 1.3 | Vdc |
Key Features
- Epitaxial planar die construction for reliable performance.
- Low saturation voltage (VCE(sat) < 300mV at IC = 150mA) for efficient operation.
- High DC current gain (hFE up to 75 at IC = 10mA, VCE = 10Vdc).
- Collector current up to 1.0 A, suitable for medium power applications.
- Totally lead-free and fully RoHS compliant, ensuring environmental sustainability.
- Halogen- and antimony-free, making it a “green” device.
- Complementary PNP type: MMBT2907A.
Applications
The MMBT2222A is ideal for various applications, including:
- Medium power amplification.
- General-purpose switching.
- Driver stages of AF amplifiers.
- Automotive applications (AEC-Q101 qualified for specific models).
Q & A
- What is the maximum collector-emitter breakdown voltage of the MMBT2222A?
The maximum collector-emitter breakdown voltage is 40 Vdc. - What is the maximum collector current rating of the MMBT2222A?
The maximum collector current rating is 1.0 A. - What is the typical saturation voltage (VCE(sat)) of the MMBT2222A?
The typical saturation voltage (VCE(sat)) is less than 300mV at IC = 150mA. - Is the MMBT2222A lead-free and RoHS compliant?
Yes, the MMBT2222A is totally lead-free and fully RoHS compliant. - What is the thermal resistance (RθJA) of the MMBT2222A in a SOT-23 package?
The thermal resistance (RθJA) is 357 °C/W. - What are the operating and storage temperature ranges for the MMBT2222A?
The operating and storage junction temperature range is -55 to 150 °C. - Is the MMBT2222A suitable for automotive applications?
Yes, specific models of the MMBT2222A are AEC-Q101 qualified and suitable for automotive applications. - What is the complementary PNP type of the MMBT2222A?
The complementary PNP type is the MMBT2907A. - What package type is the MMBT2222A available in?
The MMBT2222A is available in a SOT-23 package. - What is the typical base-emitter saturation voltage (VBE(sat)) of the MMBT2222A?
The typical base-emitter saturation voltage (VBE(sat)) is 1.3 Vdc at IC = 150mA and IB = 15mA.
