Overview
The MBRB1045T4G is a Schottky Power Rectifier produced by onsemi, designed for high-performance applications in power management. This device utilizes the Schottky Barrier principle in a large metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 45 | V |
| Average Rectified Forward Current (TC = 135°C) | IF(AV) | 10 | A |
| Peak Repetitive Forward Current (Square Wave, Duty = 0.5) (TC = 135°C) | IFRM | 20 | A |
| Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) | IFSM | 150 (MBRB/SBRB), 70 (MBRD/SBRD) | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −65 to +175 | °C |
| Maximum Instantaneous Forward Voltage (IF = 10 Amps, TJ = 125°C) | VF | 0.57 | V |
| Thermal Resistance, Junction-to-Case | RθJC | 1.0 (MBRB1045G), 2.43 (MBRD1045G) | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 (MBRB1045G), 68 (MBRD1045G) | °C/W |
Key Features
- Guardring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Epoxy meets UL 94 V-0 @ 0.125 in
- Short Heat Sink Tab Manufactured − Not Sheared
- SBRB and SBRD8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
- Corrosion Resistant and Terminal Leads are Readily Solderable
- ESD Ratings: Machine Model = C (> 400 V), Human Body Model = 3B (> 8000 V)
Applications
The MBRB1045T4G is ideally suited for various applications including:
- Low voltage, high frequency switching power supplies
- Free wheeling diodes
- Polarity protection diodes
- Automotive and other applications requiring unique site and control change requirements
Q & A
- What is the peak repetitive reverse voltage of the MBRB1045T4G?
The peak repetitive reverse voltage (VRRM) is 45 V.
- What is the average rectified forward current of the MBRB1045T4G at TC = 135°C?
The average rectified forward current (IF(AV)) is 10 A at TC = 135°C.
- What is the maximum instantaneous forward voltage of the MBRB1045T4G at IF = 10 Amps and TJ = 125°C?
The maximum instantaneous forward voltage (VF) is 0.57 V at IF = 10 Amps and TJ = 125°C.
- What are the thermal resistance values for the MBRB1045T4G?
The thermal resistance, Junction-to-Case (RθJC), is 1.0 °C/W for MBRB1045G and 2.43 °C/W for MBRD1045G. The thermal resistance, Junction-to-Ambient (RθJA), is 50 °C/W for MBRB1045G and 68 °C/W for MBRD1045G.
- Is the MBRB1045T4G RoHS compliant?
- What are the ESD ratings for the MBRB1045T4G?
The ESD ratings are Machine Model = C (> 400 V) and Human Body Model = 3B (> 8000 V).
- What is the operating junction and storage temperature range for the MBRB1045T4G?
The operating junction and storage temperature range is −65 to +175 °C.
- What are some typical applications for the MBRB1045T4G?
Typical applications include low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
- Is the MBRB1045T4G suitable for automotive applications?
- What is the package type for the MBRB1045T4G?
The package types include D2PAK-3 and DPAK, with options for tape and reel packaging.
