MBR1060G
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onsemi MBR1060G

Manufacturer No:
MBR1060G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 60V 10A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR1060G is a high-performance Schottky rectifier diode produced by onsemi. This component is designed for switchmode power rectification and is known for its low forward voltage, high efficiency, and high surge capacity. The MBR1060G is packaged in a TO-220AC case and is available in a Pb-free version, making it suitable for a wide range of applications where reliability and efficiency are critical.

Key Specifications

Parameter Value Unit
Voltage - Peak Repetitive Reverse (VRRM) 60 V
Current - Average Rectified (IF(AV)) 10 A
Current - Peak Repetitive Forward (IFRM) 20 A
Current - Nonrepetitive Peak Surge (IFSM) 150 A
Voltage - Forward (VF) @ IF = 10 A 0.8 V
Operating Junction Temperature (TJ) -65 to +175 °C
Storage Temperature (Tstg) -65 to +175 °C
Thermal Resistance, Junction-to-Case (RJC) 2.0 °C/W
Thermal Resistance, Junction-to-Ambient (RJA) 60 °C/W

Key Features

  • Guard-ring for stress protection
  • Low forward voltage (VF) for high efficiency
  • High surge capacity
  • Low power loss/high efficiency
  • Low stored charge and majority carrier conduction
  • Pb-free packages available
  • Epoxy meets UL 94 V-0 @ 0.125 in
  • All external surfaces are corrosion-resistant and terminal leads are readily solderable

Applications

The MBR1060G Schottky rectifier is suitable for various high-frequency switching applications, including:

  • Switchmode power supplies
  • High-frequency rectification
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the maximum peak repetitive reverse voltage (VRRM) of the MBR1060G?

    The maximum peak repetitive reverse voltage (VRRM) is 60 V.

  2. What is the average rectified forward current (IF(AV)) rating of the MBR1060G?

    The average rectified forward current (IF(AV)) rating is 10 A.

  3. What is the maximum forward voltage (VF) at 10 A for the MBR1060G?

    The maximum forward voltage (VF) at 10 A is 0.8 V.

  4. What is the operating junction temperature range for the MBR1060G?

    The operating junction temperature range is -65°C to +175°C.

  5. Does the MBR1060G have a Pb-free package option?
  6. What are the key features of the MBR1060G Schottky rectifier?
  7. What are some common applications for the MBR1060G?
  8. What is the thermal resistance from junction-to-case (RJC) for the MBR1060G?
  9. Is the MBR1060G epoxy package compliant with any specific standards?
  10. What is the maximum nonrepetitive peak surge current (IFSM) for the MBR1060G?

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MBR1060G MBR160G MBR1060S MBR1090G MBR1080G MBR1060H MBR1060
Manufacturer onsemi onsemi SMC Diode Solutions onsemi onsemi onsemi SMC Diode Solutions
Product Status Active Active Active Obsolete Obsolete Obsolete Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 60 V 90 V 80 V 60 V 60 V
Current - Average Rectified (Io) 10A 1A 10A 10A 10A 10A -
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 750 mV @ 1 A 630 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 60 V 500 µA @ 60 V 1 mA @ 60 V 100 µA @ 90 V 100 µA @ 80 V 100 µA @ 60 V 1 mA @ 60 V
Capacitance @ Vr, F - - 850pF @ 5V, 1MHz - - - 400pF @ 5V, 1MHz
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 DO-204AL, DO-41, Axial TO-277, 3-PowerDFN TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 Axial TO-277B TO-220-2 TO-220-2 TO-220-2 TO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C

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