Overview
The MBR160G is a Schottky Barrier Rectifier produced by onsemi, designed for high-efficiency and low-voltage applications. This device is part of the MBR150/160 series, which employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The MBR160G is particularly suited for use in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 60 | V |
| Working Peak Reverse Voltage | VRWM | 60 | V |
| RMS Reverse Voltage | VR(RMS) | 42 | V |
| Average Rectified Forward Current | IO | 1.0 | A |
| Nonrepetitive Peak Surge Current | IFSM | 25 | A |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
| Maximum Instantaneous Forward Voltage | vF | 0.550 (at iF = 0.1 A), 0.750 (at iF = 1.0 A), 1.000 (at iF = 3.0 A) | V |
| Thermal Resistance, Junction-to-Ambient | RθJA | 80 | °C/W |
Key Features
- Low Reverse Current: Minimizes leakage current, enhancing overall efficiency.
- Low Stored Charge, Majority Carrier Conduction: Reduces switching times and losses.
- Low Power Loss/High Efficiency: Suitable for high-frequency applications with minimal power dissipation.
- Highly Stable Oxide Passivated Junction: Ensures reliability and stability under various operating conditions.
- Pb-Free Devices: Compliant with environmental regulations and safe for use in a variety of applications.
- Corrosion Resistant and Solderable Leads: Easy to integrate into various circuits and systems.
Applications
The MBR160G is ideally suited for several key applications:
- Low-Voltage, High-Frequency Inverters: Due to its low forward voltage drop and high efficiency.
- Free-Wheeling Diodes: Its fast switching times and low stored charge make it suitable for free-wheeling applications.
- Polarity Protection Diodes: Protects circuits from reverse polarity conditions.
Q & A
- What is the peak repetitive reverse voltage of the MBR160G?
The peak repetitive reverse voltage (VRRM) of the MBR160G is 60 V.
- What is the average rectified forward current rating of the MBR160G?
The average rectified forward current (IO) is 1.0 A.
- What is the nonrepetitive peak surge current rating of the MBR160G?
The nonrepetitive peak surge current (IFSM) is 25 A for one cycle.
- What is the operating temperature range of the MBR160G?
The operating and storage junction temperature range is −65 to +150 °C.
- What is the maximum instantaneous forward voltage of the MBR160G?
The maximum instantaneous forward voltage (vF) is 0.550 V at 0.1 A, 0.750 V at 1.0 A, and 1.000 V at 3.0 A.
- Is the MBR160G Pb-Free?
- What are the typical applications of the MBR160G?
The MBR160G is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
- What is the thermal resistance, junction-to-ambient (RθJA) of the MBR160G?
The thermal resistance, junction-to-ambient (RθJA), is 80 °C/W.
- How is the polarity indicated on the MBR160G?
The polarity is indicated by a cathode band on the device.
- What is the package type of the MBR160G?
The MBR160G comes in an axial lead package (DO-41).
