Overview
The MBR1045G is a high-performance Schottky power rectifier produced by onsemi. This component is designed using the Schottky Barrier principle in a large metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. It is ideally suited for applications requiring low forward voltage, high frequency switching, and high surge capacity.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 45 | V |
| Average Rectified Forward Current (TC = 135°C) | IF(AV) | 10 | A |
| Peak Repetitive Forward Current (Square Wave, Duty = 0.5, TC = 135°C) | IFRM | 20 | A |
| Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) | IFSM | 150 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −65 to +175 | °C |
| Voltage Rate of Change (Rated VR) | dv/dt | 10000 | V/μs |
| Maximum Instantaneous Forward Voltage (IF = 10 Amps, TJ = 125°C) | VF | 0.57 | V |
| Thermal Resistance, Junction-to-Case | RJC | 1.0 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 50 | °C/W |
Key Features
- Low Forward Voltage: Ensures high efficiency and low power loss.
- High Surge Capacity: Can handle nonrepetitive peak surge currents up to 150 A.
- 175°C Operating Junction Temperature: Allows for operation in high-temperature environments.
- Guardring for Stress Protection: Enhances the component's reliability and durability.
- Pb-Free Packages Available: Compliant with environmental regulations.
- High ESD Rating: Human Body Model = 3B (> 8000 V).
Applications
- Power Supply – Output Rectification: Ideal for use in switching power supplies due to its low forward voltage and high frequency capabilities.
- Power Management: Suitable for various power management applications requiring efficient rectification.
- Free Wheeling Diodes: Used in applications where the diode needs to conduct in the reverse direction during the off-state of the switching device.
- Polarity Protection Diodes: Protects against incorrect polarity connections.
Q & A
- What is the peak repetitive reverse voltage of the MBR1045G?
The peak repetitive reverse voltage (VRRM) of the MBR1045G is 45 V.
- What is the average rectified forward current of the MBR1045G at TC = 135°C?
The average rectified forward current (IF(AV)) at TC = 135°C is 10 A.
- What is the maximum instantaneous forward voltage of the MBR1045G at IF = 10 Amps and TJ = 125°C?
The maximum instantaneous forward voltage (VF) at IF = 10 Amps and TJ = 125°C is 0.57 V.
- What is the operating junction and storage temperature range of the MBR1045G?
The operating junction and storage temperature range (TJ, Tstg) is −65 to +175 °C.
- What is the thermal resistance, junction-to-case, of the MBR1045G?
The thermal resistance, junction-to-case (RJC), is 1.0 °C/W.
- What are some common applications of the MBR1045G?
Common applications include power supply output rectification, power management, free wheeling diodes, and polarity protection diodes.
- Is the MBR1045G Pb-free?
- What is the ESD rating of the MBR1045G?
The ESD rating of the MBR1045G is Human Body Model = 3B (> 8000 V).
- Can the MBR1045G be used in high-temperature environments?
- What is the nonrepetitive peak surge current capability of the MBR1045G?
The nonrepetitive peak surge current (IFSM) capability is 150 A.
