KSP13TA
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onsemi KSP13TA

Manufacturer No:
KSP13TA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN DARL 30V 0.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The KSP13TA is an NPN Darlington bipolar junction transistor manufactured by onsemi. This transistor is designed for general usage and is suitable for a wide range of applications due to its high gain and robust specifications. It is housed in a TO-92 package, making it compact and versatile for various electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCES) 30 V
Collector Current (IC) 500 mA
Collector Power Dissipation (PC) 625 mW
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -55 to 150 °C
DC Current Gain (hFE) 5k to 10k
Collector-Emitter Saturation Voltage (VCE(sat)) 1.5 V
Base-Emitter On Voltage (VBE(on)) 2.0 V
Current Gain Bandwidth Product (fT) 125 MHz
Package Type TO-92
Mounting Type THT (Through-Hole Technology)

Key Features

  • High Gain: The KSP13TA offers high DC current gain, ranging from 5k to 10k, making it suitable for applications requiring high current amplification.
  • Pb-Free and RoHS Compliant: This transistor is lead-free, halogen-free, and BFR-free, ensuring compliance with environmental regulations.
  • Compact Packaging: Housed in a TO-92 package, it is compact and easy to integrate into various electronic designs.
  • Robust Specifications: With a collector-emitter voltage of 30V and collector current of 500mA, it is robust and reliable for general-purpose applications.

Applications

The KSP13TA is versatile and can be used in a variety of applications, including:

  • General-purpose amplification and switching circuits.
  • Automotive and industrial control systems.
  • Power supplies and voltage regulators.
  • Audio and signal processing circuits.

Q & A

  1. What is the collector-emitter voltage of the KSP13TA transistor?

    The collector-emitter voltage (VCES) of the KSP13TA is 30V.

  2. What is the maximum collector current of the KSP13TA?

    The maximum collector current (IC) is 500mA.

  3. What is the power dissipation of the KSP13TA?

    The collector power dissipation (PC) is 625mW.

  4. What is the junction temperature range of the KSP13TA?

    The junction temperature (TJ) range is up to 150°C.

  5. Is the KSP13TA RoHS compliant?
  6. What is the typical DC current gain of the KSP13TA?

    The DC current gain (hFE) ranges from 5k to 10k.

  7. What is the collector-emitter saturation voltage of the KSP13TA?

    The collector-emitter saturation voltage (VCE(sat)) is approximately 1.5V.

  8. What is the base-emitter on voltage of the KSP13TA?

    The base-emitter on voltage (VBE(on)) is approximately 2.0V.

  9. What is the current gain bandwidth product of the KSP13TA?

    The current gain bandwidth product (fT) is 125MHz.

  10. In what package is the KSP13TA available?

    The KSP13TA is housed in a TO-92 package.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

$0.37
1,868

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Similar Products

Part Number KSP13TA KSP13TF KSP14TA KSP43TA KSP93TA KSP63TA KSP12TA
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN PNP PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 200 V 200 V 30 V 20 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 1.5V @ 100µA, 100mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 1.5V @ 100µA, 100mA 1V @ 10µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 250nA (ICBO) 100nA (ICBO) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V 10000 @ 100mA, 5V 20000 @ 100mA, 5V 40 @ 30mA, 10V 25 @ 30mA, 10V 10000 @ 100mA, 5V 20000 @ 10mA, 5V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 125MHz 125MHz 125MHz 50MHz 50MHz 125MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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