FSV20100V
  • Share:

onsemi FSV20100V

Manufacturer No:
FSV20100V
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 20A TO277-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FSV20100V is a high-performance Ultra-Low VF Schottky Rectifier manufactured by onsemi. This component is designed to operate at 20 A and 100 V, making it suitable for a variety of power management and rectification applications. It features a compact TO-277 package with a very low profile, typically 1.1 mm in height, which is beneficial for space-constrained designs. The device is built using trench Schottky technology, ensuring ultra-low forward voltage drop and low thermal resistance.

Key Specifications

Parameter Value Unit
VRRM (Peak Repetitive Reverse Voltage) 100 V
VRWM (Working Peak Reverse Voltage) 100 V
VRMS (RMS Reverse Voltage) 70 V
IF(AV) (Average Rectified Peak Forward Surge Current) 20 A
IFSM (Non-Repetitive Peak Forward Surge Current) 270 A
TJ (Operating Junction Temperature Range) -55 to +150 °C
TSTG (Storage Temperature Range) -55 to +150 °C
VF (Forward Voltage Drop at IF = 20 A) 0.66 V
IR (Reverse Current at VR = 100 V) 80 μA
RθJA (Junction-to-Ambient Thermal Resistance) 100 (min), 40 (max) °C/W
ΨJL (Junction-to-Lead Thermal Characteristics) 15 (min), 12 (max) for Anode; 6 (min), 5 (max) for Cathode °C/W

Key Features

  • Ultra-Low Forward Voltage Drop: The FSV20100V features an ultra-low forward voltage drop of 0.66 V at 20 A, reducing power losses and improving efficiency.
  • Low Thermal Resistance: The device has low thermal resistance, ensuring better heat dissipation and reliability.
  • Very Low Profile: With a typical height of 1.1 mm, this component is ideal for space-constrained applications.
  • Trench Schottky Technology: Utilizes advanced trench Schottky technology for enhanced performance and reliability.
  • Green Molding Compound and RoHS Compliance: The device is made with green molding compound as per IEC61249 standard and is Pb-free, halogen-free, and RoHS compliant.

Applications

The FSV20100V is suitable for various applications requiring high current and low voltage drop, such as:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems, including battery management and power distribution
  • Industrial power management and rectification
  • Consumer electronics requiring efficient power handling

Q & A

  1. What is the peak repetitive reverse voltage of the FSV20100V?

    The peak repetitive reverse voltage (VRRM) of the FSV20100V is 100 V.

  2. What is the average rectified peak forward surge current of the FSV20100V?

    The average rectified peak forward surge current (IF(AV)) of the FSV20100V is 20 A.

  3. What is the non-repetitive peak forward surge current of the FSV20100V?

    The non-repetitive peak forward surge current (IFSM) of the FSV20100V is 270 A.

  4. What is the operating junction temperature range of the FSV20100V?

    The operating junction temperature range (TJ) of the FSV20100V is -55 to +150 °C.

  5. What is the forward voltage drop of the FSV20100V at 20 A?

    The forward voltage drop (VF) of the FSV20100V at 20 A is 0.66 V.

  6. Is the FSV20100V RoHS compliant?

    Yes, the FSV20100V is Pb-free, halogen-free, and RoHS compliant.

  7. What package type does the FSV20100V come in?

    The FSV20100V comes in a TO-277 package.

  8. What is the typical height of the FSV20100V package?

    The typical height of the FSV20100V package is 1.1 mm.

  9. What technology is used in the FSV20100V?

    The FSV20100V uses trench Schottky technology.

  10. What are the thermal resistance characteristics of the FSV20100V?

    The junction-to-ambient thermal resistance (RθJA) ranges from 100 to 40 °C/W, and the junction-to-lead thermal resistance (ΨJL) ranges from 15 to 12 °C/W for the anode and 6 to 5 °C/W for the cathode.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:660 mV @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:80 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:TO-277-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$1.42
480

Please send RFQ , we will respond immediately.

Similar Products

Part Number FSV20100V FSV20150V FSV20120V FSV10100V
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 150 V 120 V 100 V
Current - Average Rectified (Io) 20A 20A 20A 10A
Voltage - Forward (Vf) (Max) @ If 660 mV @ 20 A 840 mV @ 20 A 790 mV @ 20 A 670 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - 22.94 ns
Current - Reverse Leakage @ Vr 80 µA @ 100 V 30 µA @ 150 V 35 µA @ 120 V 60 µA @ 100 V
Capacitance @ Vr, F - - - 796pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package TO-277-3 TO-277-3 TO-277-3 TO-277-3
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN