Overview
The FDS8958A-F085 is a dual N- and P-Channel enhancement mode power field effect transistor (MOSFET) produced by onsemi. This device is fabricated using onsemi's advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining superior switching performance. The FDS8958A-F085 is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are critical.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 30 | -30 | V |
| Gate-Source Voltage (VGSS) | ±20 | ±20 | V |
| Continuous Drain Current (ID) | 7 | -5 | A |
| Pulsed Drain Current (ID) | 20 | -20 | A |
| Power Dissipation for Dual Operation | 2 | 2 | W |
| Power Dissipation for Single Operation | 1.6 | 1.6 | W |
| Gate Threshold Voltage (VGS(th)) | 1 - 3 | -1 - -3 | V |
| On-State Drain-Source Resistance (RDS(on)) at VGS = 10V | 0.028 | 0.052 | Ω |
| On-State Drain-Source Resistance (RDS(on)) at VGS = 4.5V | 0.040 | 0.080 | Ω |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 78 | 78 | °C/W |
| Operating and Storage Junction Temperature Range | -55 to +150 | -55 to +150 | °C |
Key Features
- Dual N- and P-Channel enhancement mode MOSFETs
- Produced using onsemi's advanced PowerTrench process
- Low on-state resistance: RDS(on) = 0.028Ω for N-Channel at VGS = 10V and RDS(on) = 0.052Ω for P-Channel at VGS = -10V
- Fast switching speed
- High power handling capability in a SO-8 surface mount package
- Low in-line power loss and fast switching suitable for low voltage and battery-powered applications
Applications
- Low voltage and battery-powered systems
- Power management in portable electronics
- DC-DC converters and power supplies
- Motor control and drive circuits
- Switching and linear amplifiers
Q & A
- What is the maximum drain-source voltage for the FDS8958A-F085 MOSFET?
The maximum drain-source voltage (VDSS) is 30V for the N-Channel and -30V for the P-Channel.
- What is the gate-source voltage range for this MOSFET?
The gate-source voltage (VGSS) range is ±20V.
- What are the continuous drain current ratings for Q1 and Q2?
The continuous drain current (ID) is 7A for Q1 (N-Channel) and -5A for Q2 (P-Channel).
- What is the typical on-state resistance for Q1 and Q2 at VGS = 10V?
The typical on-state resistance (RDS(on)) is 0.028Ω for Q1 and 0.052Ω for Q2 at VGS = 10V.
- What is the thermal resistance, junction-to-ambient (RθJA) for this device?
The thermal resistance, junction-to-ambient (RθJA) is 78°C/W.
- What are the operating and storage junction temperature ranges for the FDS8958A-F085?
The operating and storage junction temperature range is -55°C to +150°C.
- What package type is the FDS8958A-F085 available in?
The FDS8958A-F085 is available in a SO-8 surface mount package.
- Is the FDS8958A-F085 recommended for new designs?
No, the FDS8958A-F085 is not recommended for new designs. Please contact your onsemi representative for information on suitable alternatives.
- What are some typical applications for the FDS8958A-F085 MOSFET?
Typical applications include low voltage and battery-powered systems, power management in portable electronics, DC-DC converters, motor control, and switching and linear amplifiers.
- What is the maximum power dissipation for single operation of the FDS8958A-F085?
The maximum power dissipation for single operation is 1.6W.
