Overview
The FDMC8030 is a dual N-Channel Power Trench® MOSFET produced by onsemi. This device features two 40V N-Channel MOSFETs packaged in a Power 33 (3 mm x 3 mm MLP) package, which is designed for exceptional thermal performance. The FDMC8030 is suitable for various high-power applications due to its low on-resistance and robust thermal characteristics.
Key Specifications
| Parameter | Ratings | Units |
|---|---|---|
| VDS (Drain to Source Voltage) | 40 | V |
| VGS (Gate to Source Voltage) | ±12 | V |
| ID (Continuous Drain Current at TA = 25 °C) | 12 | A |
| ID (Pulsed Drain Current) | 50 | A |
| EAS (Single Pulse Avalanche Energy) | 21 | mJ |
| PD (Power Dissipation at TC = 25 °C) | 14 | W |
| PD (Power Dissipation at TA = 25 °C) | 1.9 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 9.0 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 65 / 155 | °C/W |
| rDS(on) at VGS = 10 V, ID = 12 A | 10 mΩ | mΩ |
| rDS(on) at VGS = 4.5 V, ID = 10 A | 14 mΩ | mΩ |
| rDS(on) at VGS = 3.2 V, ID = 4 A | 28 mΩ | mΩ |
Key Features
- Low on-resistance: Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A.
- High current capability: Continuous drain current up to 12 A and pulsed current up to 50 A.
- Enhanced thermal performance: Power 33 (3 mm x 3 mm MLP) package.
- Lead-free and RoHS compliant.
- Low gate to source threshold voltage: VGS(th) = 1.0 to 2.8 V.
Applications
- Battery Protection: Suitable for battery management systems due to its high current and low on-resistance.
- Load Switching: Ideal for switching high current loads efficiently.
- Point of Load: Used in point of load (POL) applications where high efficiency and low thermal resistance are crucial.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC8030? The maximum VDS is 40 V.
- What is the continuous drain current (ID) rating of the FDMC8030? The continuous drain current rating is 12 A.
- What is the thermal resistance (RθJA) of the FDMC8030? The thermal resistance can be 65 °C/W or 155 °C/W depending on the mounting conditions.
- Is the FDMC8030 lead-free and RoHS compliant? Yes, the FDMC8030 is lead-free and RoHS compliant.
- What are the typical applications of the FDMC8030? The FDMC8030 is typically used in battery protection, load switching, and point of load applications.
- What is the gate to source threshold voltage (VGS(th)) range of the FDMC8030? The VGS(th) range is from 1.0 to 2.8 V.
- What is the maximum single pulse avalanche energy (EAS) of the FDMC8030? The maximum EAS is 21 mJ.
- What is the power dissipation (PD) at TA = 25 °C for the FDMC8030? The power dissipation at TA = 25 °C is 1.9 W.
- What is the operating and storage junction temperature range (TJ, TSTG) for the FDMC8030? The operating and storage junction temperature range is -55 to +150 °C.
- Can the FDMC8030 be used in life support systems or FDA Class 3 medical devices? No, the FDMC8030 is not designed, intended, or authorized for use in life support systems or FDA Class 3 medical devices.
