D45VH10G
  • Share:

onsemi D45VH10G

Manufacturer No:
D45VH10G
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS PNP 80V 15A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The D45VH10G is a PNP complementary silicon power transistor manufactured by onsemi. This transistor is designed for high-speed switching applications, including switching regulators and high-frequency inverters. It is also suitable for driving high-power switching circuits. The D45VH10G is part of a complementary pair with the NPN D44VH10, which simplifies circuit design and enhances performance in various power management and control systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Emitter Voltage (VCEV) VCEV 100 Vdc
Emitter Base Voltage VEB 7.0 Vdc
Collector Current - Continuous IC 15 Adc
Collector Current - Peak ICM 20 Adc
Total Power Dissipation @ TC = 25°C PD 83 W
Operating and Storage Junction Temperature Range TJ, Tstg -55 to 150 °C
Thermal Resistance, Junction to Case RJC 1.5 °C/W
Thermal Resistance, Junction to Ambient RJA 62.5 °C/W
Maximum Lead Temperature for Soldering Purposes TL 275 °C

Key Features

  • Fast Switching: Designed for high-speed switching applications.
  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • Complementary Pairs: Simplifies circuit designs when used with the NPN D44VH10.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • High Current Gain Bandwidth Product: Up to 50 MHz, suitable for high-frequency applications.
  • Low Delay, Rise, Storage, and Fall Times: Optimized for fast switching performance.

Applications

  • Switching Regulators: Ideal for high-efficiency power supply designs.
  • High Frequency Inverters: Suitable for applications requiring high-frequency switching.
  • High Power Switching Circuits: Used as drivers for high-power switching applications.
  • General Power Management: Can be used in various power management and control systems.

Q & A

  1. What is the collector-emitter voltage rating of the D45VH10G?

    The collector-emitter voltage (VCEO) is rated at 80 Vdc, and the collector-emitter voltage (VCEV) is rated at 100 Vdc.

  2. What is the maximum continuous collector current for the D45VH10G?

    The maximum continuous collector current (IC) is 15 Adc.

  3. Is the D45VH10G Pb-Free and RoHS compliant?
  4. What is the thermal resistance from junction to case for the D45VH10G?
  5. What are the typical applications of the D45VH10G?
  6. What is the maximum lead temperature for soldering purposes?
  7. What is the current gain bandwidth product of the D45VH10G?
  8. Can the D45VH10G be used in life support systems or FDA Class 3 medical devices?
  9. What is the operating and storage junction temperature range for the D45VH10G?
  10. What package type is the D45VH10G available in?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 800mA, 8A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 1V
Power - Max:83 W
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$0.90
796

Please send RFQ , we will respond immediately.

Same Series
D44VH10G
D44VH10G
TRANS NPN 80V 15A TO220
D44VH10
D44VH10
TRANS NPN 80V 15A TO220
D45VH10
D45VH10
TRANS PNP 80V 15A TO220

Similar Products

Part Number D45VH10G D44VH10G D45VH10
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 15 A 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 8A 400mV @ 400mA, 8A 1V @ 800mA, 8A
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 1V 20 @ 4A, 1V 20 @ 4A, 1V
Power - Max 83 W 83 W 83 W
Frequency - Transition 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220

Related Product By Categories

SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817-25W_R1_00001
BC817-25W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
MMBT5088LT1G
MMBT5088LT1G
onsemi
TRANS NPN 30V 0.05A SOT23-3
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC860CWH6327XTSA1
BC860CWH6327XTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD