BDW93CPWD
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onsemi BDW93CPWD

Manufacturer No:
BDW93CPWD
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDW93CPWD, produced by ON Semiconductor, is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration. It is housed in a TO-220 plastic package, making it suitable for various power linear and switching applications. This transistor is part of the BDW93 series, which includes different voltage ratings, and it is complemented by the PNP type BDW94C.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 100 V
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 12 A
Collector Peak Current (ICM) 15 A
Base Current (IB) 0.2 A
Total Dissipation at Tc ≤ 25°C (Ptot) 80 W
Storage Temperature (Tstg) -65 to 150 °C
Maximum Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-case (Rθjc) 1.56 °C/W

Key Features

  • Monolithic Darlington Configuration: Provides high current gain and low base current requirements.
  • High Collector Current: Up to 12 A, with a peak current of 15 A.
  • High Voltage Ratings: Collector-Base voltage up to 100 V and Collector-Emitter voltage up to 100 V.
  • Low Saturation Voltage: Ensures efficient operation with minimal power loss.
  • Complementary PNP Type: The BDW94C is available as a complementary PNP transistor.
  • TO-220 Package: Suitable for a wide range of applications requiring high power handling.

Applications

  • Power Linear and Switching Applications: Ideal for use in industrial equipment, power supplies, and motor control systems.
  • Hammer Drivers: Suitable for high-current pulse applications.
  • Audio Amplifiers: Can be used in high-power audio amplifier circuits.

Q & A

  1. What is the maximum collector current of the BDW93CPWD?

    The maximum collector current is 12 A, with a peak current of 15 A.

  2. What is the maximum collector-emitter voltage of the BDW93CPWD?

    The maximum collector-emitter voltage is 100 V.

  3. What is the thermal resistance junction-case of the BDW93CPWD?

    The thermal resistance junction-case is 1.56 °C/W.

  4. What is the storage temperature range for the BDW93CPWD?

    The storage temperature range is -65 to 150 °C.

  5. What is the maximum operating junction temperature for the BDW93CPWD?

    The maximum operating junction temperature is 150 °C.

  6. What type of package does the BDW93CPWD come in?

    The BDW93CPWD comes in a TO-220 plastic package.

  7. What are some common applications for the BDW93CPWD?

    Common applications include power linear and switching applications, hammer drivers, and audio amplifiers.

  8. Is the BDW93CPWD available with a complementary PNP type?
  9. What is the typical DC current gain of the BDW93CPWD?

    The typical DC current gain is 1000 at IC = 3 A and VCE = 3 V.

  10. Can the BDW93CPWD be used in life support systems or medical devices?

    No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems or any FDA Class 3 medical devices.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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