Overview
The BD681STU-ON is a Medium Power NPN Darlington Bipolar Power Transistor manufactured by onsemi. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It features a monolithic construction and is part of a series that includes complementary transistors such as BD676, BD678, BD680, and BD682. The BD681 is also equivalent to other transistors like MJE 800, 801, 802, and 803.
Key Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer | onsemi | Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 4 A | Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A | Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V | Power - Max | 40 W |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
Key Features
- High DC Current Gain (hFE) of 750 (Min) at IC = 1.5A and VCE = 3V.
- Monolithic construction for reliability and performance.
- Pb-Free packages available, ensuring compliance with RoHS standards.
- Complementary to other transistors in the series, such as BD676, BD678, BD680, and BD682.
- Equivalent to MJE 800, 801, 802, and 803 transistors.
- Collector-Emitter Saturation Voltage (Vce(sat)) of 2.5V at IC = 1.5A and IB = 30mA.
Applications
The BD681STU-ON is suitable for medium power linear and switching applications. It is commonly used as output devices in complementary general-purpose amplifier circuits. The transistor's high current gain and robust construction make it ideal for various power management and control applications.
Q & A
- Q: What is the maximum collector current of the BD681STU-ON transistor?
A: The maximum collector current (Ic) of the BD681STU-ON transistor is 4 A.
- Q: What is the collector-emitter breakdown voltage of the BD681STU-ON?
A: The collector-emitter breakdown voltage (Vceo) of the BD681STU-ON is 100 V.
- Q: What is the DC current gain (hFE) of the BD681STU-ON transistor?
A: The minimum DC current gain (hFE) of the BD681STU-ON transistor is 750 at IC = 1.5A and VCE = 3V.
- Q: What are the operating temperature ranges for the BD681STU-ON transistor?
A: The operating temperature range for the BD681STU-ON transistor is -55°C to 150°C (TJ).
- Q: What packages are available for the BD681STU-ON transistor?
A: The BD681STU-ON transistor is available in TO-225AA and TO-126-3 packages.
- Q: Is the BD681STU-ON transistor RoHS compliant?
A: Yes, the BD681STU-ON transistor is RoHS compliant and available in Pb-Free packages.
- Q: What is the collector-emitter saturation voltage (Vce(sat)) of the BD681STU-ON transistor?
A: The collector-emitter saturation voltage (Vce(sat)) of the BD681STU-ON transistor is 2.5V at IC = 1.5A and IB = 30mA.
- Q: What is the maximum power dissipation of the BD681STU-ON transistor?
A: The maximum power dissipation of the BD681STU-ON transistor is 40 W.
- Q: How can I ensure the authenticity of the BD681STU-ON transistor from onsemi?
A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original onsemi manufacturers and authorized agents.
- Q: What is the warranty period for the BD681STU-ON transistor?
A: The warranty period for the BD681STU-ON transistor is typically 1 year, covering defects in materials and workmanship under normal use.
- Q: Where can I find detailed information about the BD681STU-ON transistor, such as application notes and datasheets?
A: Detailed information, including datasheets and application notes, can be found on the onsemi website or through authorized distributors like Ovaga and Heisener.
