Overview
The BD677AS-ON, produced by onsemi, is a Medium Power NPN Darlington Bipolar Power Transistor. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It is part of a series of Darlington transistors known for their high DC current gain and monolithic construction. Although the BD677AS-ON is currently obsolete, it remains relevant for legacy systems and maintenance purposes.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 60 | V |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 4 | A |
| Collector Peak Current (ICM) | 6 | A |
| Base Current (IB) | 0.1 | A |
| Total Dissipation at Tcase ≤25°C (PTOT) | 40 | W |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
| DC Current Gain (hFE) @ IC = 2 A, VCE = 3 V | 750 (Min) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 2 A, IB = 40 mA | 2.8 | V |
| Base-Emitter Voltage (VBE) @ IC = 2 A, VCE = 3 V | 2.5 | V |
| Package Type | TO-126-3 |
Key Features
- High DC Current Gain: The BD677AS-ON has a high DC current gain (hFE) of 750 (Min) at IC = 2 A and VCE = 3 V.
- Monolithic Construction: The transistor features a monolithic Darlington configuration, which includes an integrated antiparallel collector-emitter diode.
- Good hFE Linearity: It exhibits good linearity in DC current gain, making it suitable for various applications.
- High fT Frequency: The transistor has a high fT frequency, enhancing its performance in switching applications.
- Pb-Free Packages Available: The BD677AS-ON is available in lead-free packages, meeting environmental requirements.
Applications
- Linear and Switching Industrial Equipment: The BD677AS-ON is used in medium power linear and switching industrial equipment due to its robust specifications and reliability.
- General-Purpose Amplifier Applications: It is suitable for use as output devices in complementary general-purpose amplifier applications.
Q & A
- What is the collector-emitter voltage (VCEO) of the BD677AS-ON?
The collector-emitter voltage (VCEO) of the BD677AS-ON is 60 V.
- What is the maximum collector current (IC) for the BD677AS-ON?
The maximum collector current (IC) for the BD677AS-ON is 4 A.
- What is the DC current gain (hFE) of the BD677AS-ON at IC = 2 A and VCE = 3 V?
The DC current gain (hFE) of the BD677AS-ON at IC = 2 A and VCE = 3 V is 750 (Min).
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD677AS-ON at IC = 2 A and IB = 40 mA?
The collector-emitter saturation voltage (VCE(sat)) of the BD677AS-ON at IC = 2 A and IB = 40 mA is 2.8 V.
- What is the base-emitter voltage (VBE) of the BD677AS-ON at IC = 2 A and VCE = 3 V?
The base-emitter voltage (VBE) of the BD677AS-ON at IC = 2 A and VCE = 3 V is 2.5 V.
- What package type is the BD677AS-ON available in?
The BD677AS-ON is available in the TO-126-3 package type.
- Is the BD677AS-ON still in production?
No, the BD677AS-ON is currently obsolete.
- What are the complementary PNP types for the BD677AS-ON?
The complementary PNP types for the BD677AS-ON are BD678, BD678A, BD680, BD680A, and BD682.
- What is the maximum operating junction temperature (Tj) for the BD677AS-ON?
The maximum operating junction temperature (Tj) for the BD677AS-ON is 150°C.
- What is the storage temperature range for the BD677AS-ON?
The storage temperature range for the BD677AS-ON is -65 to 150°C.
