BCW32
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onsemi BCW32

Manufacturer No:
BCW32
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 32V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCW32LT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with stringent automotive standards. The BCW32LT1G is also Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO32Vdc
Collector-Base VoltageVCBO32Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector Current - ContinuousIC100mAdc
DC Current Gain (hFE)hFE200 - 450
Total Device Dissipation (FR-5 Board, TA = 25°C)PD225mW
Derate above 25°C1.8mW/°C

Key Features

  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant.
  • High collector-emitter voltage (VCEO) of 32 Vdc.
  • Continuous collector current (IC) of 100 mA.
  • DC current gain (hFE) ranging from 200 to 450.
  • Low total device dissipation of 225 mW at 25°C.

Applications

The BCW32LT1G transistor is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • General-purpose switching and amplification: Its high current gain and low saturation voltage make it suitable for general-purpose switching and amplification circuits.
  • Industrial control systems: It can be used in industrial control systems where reliability and durability are crucial.
  • Consumer electronics: It is also applicable in consumer electronics where a reliable and efficient transistor is required.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCW32LT1G transistor?
    The collector-emitter voltage (VCEO) of the BCW32LT1G transistor is 32 Vdc.
  2. Is the BCW32LT1G transistor RoHS compliant?
    Yes, the BCW32LT1G transistor is Pb-free, halogen-free, and RoHS compliant.
  3. What is the continuous collector current (IC) of the BCW32LT1G transistor?
    The continuous collector current (IC) of the BCW32LT1G transistor is 100 mA.
  4. What is the DC current gain (hFE) range of the BCW32LT1G transistor?
    The DC current gain (hFE) of the BCW32LT1G transistor ranges from 200 to 450.
  5. What is the total device dissipation of the BCW32LT1G transistor at 25°C?
    The total device dissipation of the BCW32LT1G transistor at 25°C is 225 mW.
  6. Is the BCW32LT1G transistor suitable for automotive applications?
    Yes, the BCW32LT1G transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  7. What is the emitter-base voltage (VEBO) of the BCW32LT1G transistor?
    The emitter-base voltage (VEBO) of the BCW32LT1G transistor is 5.0 Vdc.
  8. What is the package type of the BCW32LT1G transistor?
    The BCW32LT1G transistor is packaged in a SOT-23 (TO-236) case.
  9. What are the thermal characteristics of the BCW32LT1G transistor?
    The BCW32LT1G transistor has a derate of 1.8 mW/°C above 25°C.
  10. Where can I find more detailed specifications for the BCW32LT1G transistor?
    You can find more detailed specifications in the datasheet available on the onsemi website or through distributors like DigiKey.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):32 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:350 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BCW32 BCW33 BCW30 BCW31
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA 300mV @ 500µA, 10mA 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 420 @ 2mA, 5V 215 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 350 mW 350 mW 350 mW 350 mW
Frequency - Transition 200MHz 200MHz - 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3

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