Overview
The BC847BNMMTF is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC847 series, which is designed for general-purpose amplifier applications and can handle collector currents up to 200 mA. The BC847BNMMTF is packaged in a SOT-23-3 package, making it suitable for a variety of applications where space is limited.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Voltage (VCEO) | 45 | V |
Collector-Base Voltage (VCBO) | 50 | V |
Emitter-Base Voltage (VEBO) | 6 | V |
Collector Current (IC) | 100 | mA |
DC Current Gain (hFE) | 200 - 450 | - |
Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 - 0.6 | V |
Base-Emitter Saturation Voltage (VBE(sat)) | 0.7 - 0.9 | V |
Power Dissipation (PD) | 310 | mW |
Junction Temperature (TJ) | 150 | °C |
Storage Temperature Range (TSTG) | -65 to +150 | °C |
Key Features
- General-purpose amplifier applications
- Low collector-emitter saturation voltage (VCE(sat))
- High DC current gain (hFE)
- Suitable for automatic insertion in thick and thin-film circuits
- Low noise figure
- SOT-23-3 package for compact design
Applications
The BC847BNMMTF is versatile and can be used in a wide range of applications, including:
- General-purpose amplifiers
- Switching circuits
- Audio amplifiers
- Automotive electronics
- Consumer electronics
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC847BNMMTF?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the package type of the BC847BNMMTF?
The package type is SOT-23-3.
- What is the maximum collector current (IC) of the BC847BNMMTF?
The maximum collector current (IC) is 100 mA.
- What is the typical DC current gain (hFE) range of the BC847BNMMTF?
The typical DC current gain (hFE) range is 200 to 450.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC847BNMMTF?
The collector-emitter saturation voltage (VCE(sat)) is between 0.25 V and 0.6 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the BC847BNMMTF?
The base-emitter saturation voltage (VBE(sat)) is between 0.7 V and 0.9 V.
- What is the power dissipation (PD) of the BC847BNMMTF?
The power dissipation (PD) is 310 mW.
- What is the junction temperature (TJ) of the BC847BNMMTF?
The junction temperature (TJ) is 150°C.
- What is the storage temperature range (TSTG) of the BC847BNMMTF?
The storage temperature range (TSTG) is -65°C to +150°C.
- Is the BC847BNMMTF suitable for automatic insertion in circuits?
Yes, it is suitable for automatic insertion in thick and thin-film circuits.