BC847BNMMTF
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onsemi BC847BNMMTF

Manufacturer No:
BC847BNMMTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BNMMTF is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC847 series, which is designed for general-purpose amplifier applications and can handle collector currents up to 200 mA. The BC847BNMMTF is packaged in a SOT-23-3 package, making it suitable for a variety of applications where space is limited.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 100 mA
DC Current Gain (hFE) 200 - 450 -
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 - 0.9 V
Power Dissipation (PD) 310 mW
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to +150 °C

Key Features

  • General-purpose amplifier applications
  • Low collector-emitter saturation voltage (VCE(sat))
  • High DC current gain (hFE)
  • Suitable for automatic insertion in thick and thin-film circuits
  • Low noise figure
  • SOT-23-3 package for compact design

Applications

The BC847BNMMTF is versatile and can be used in a wide range of applications, including:

  • General-purpose amplifiers
  • Switching circuits
  • Audio amplifiers
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847BNMMTF?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BNMMTF?

    The package type is SOT-23-3.

  3. What is the maximum collector current (IC) of the BC847BNMMTF?

    The maximum collector current (IC) is 100 mA.

  4. What is the typical DC current gain (hFE) range of the BC847BNMMTF?

    The typical DC current gain (hFE) range is 200 to 450.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC847BNMMTF?

    The collector-emitter saturation voltage (VCE(sat)) is between 0.25 V and 0.6 V.

  6. What is the base-emitter saturation voltage (VBE(sat)) of the BC847BNMMTF?

    The base-emitter saturation voltage (VBE(sat)) is between 0.7 V and 0.9 V.

  7. What is the power dissipation (PD) of the BC847BNMMTF?

    The power dissipation (PD) is 310 mW.

  8. What is the junction temperature (TJ) of the BC847BNMMTF?

    The junction temperature (TJ) is 150°C.

  9. What is the storage temperature range (TSTG) of the BC847BNMMTF?

    The storage temperature range (TSTG) is -65°C to +150°C.

  10. Is the BC847BNMMTF suitable for automatic insertion in circuits?

    Yes, it is suitable for automatic insertion in thick and thin-film circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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