BC847BNMMTF
  • Share:

onsemi BC847BNMMTF

Manufacturer No:
BC847BNMMTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BNMMTF is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is part of the BC847 series, which is designed for general-purpose amplifier applications and can handle collector currents up to 200 mA. The BC847BNMMTF is packaged in a SOT-23-3 package, making it suitable for a variety of applications where space is limited.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 100 mA
DC Current Gain (hFE) 200 - 450 -
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.7 - 0.9 V
Power Dissipation (PD) 310 mW
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to +150 °C

Key Features

  • General-purpose amplifier applications
  • Low collector-emitter saturation voltage (VCE(sat))
  • High DC current gain (hFE)
  • Suitable for automatic insertion in thick and thin-film circuits
  • Low noise figure
  • SOT-23-3 package for compact design

Applications

The BC847BNMMTF is versatile and can be used in a wide range of applications, including:

  • General-purpose amplifiers
  • Switching circuits
  • Audio amplifiers
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847BNMMTF?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the package type of the BC847BNMMTF?

    The package type is SOT-23-3.

  3. What is the maximum collector current (IC) of the BC847BNMMTF?

    The maximum collector current (IC) is 100 mA.

  4. What is the typical DC current gain (hFE) range of the BC847BNMMTF?

    The typical DC current gain (hFE) range is 200 to 450.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC847BNMMTF?

    The collector-emitter saturation voltage (VCE(sat)) is between 0.25 V and 0.6 V.

  6. What is the base-emitter saturation voltage (VBE(sat)) of the BC847BNMMTF?

    The base-emitter saturation voltage (VBE(sat)) is between 0.7 V and 0.9 V.

  7. What is the power dissipation (PD) of the BC847BNMMTF?

    The power dissipation (PD) is 310 mW.

  8. What is the junction temperature (TJ) of the BC847BNMMTF?

    The junction temperature (TJ) is 150°C.

  9. What is the storage temperature range (TSTG) of the BC847BNMMTF?

    The storage temperature range (TSTG) is -65°C to +150°C.

  10. Is the BC847BNMMTF suitable for automatic insertion in circuits?

    Yes, it is suitable for automatic insertion in thick and thin-film circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

-
181

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE