Overview
The BC846BLT1 is a general-purpose NPN transistor produced by onsemi. It is part of the BC846 series, which includes various gain selections and is packaged in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package. This transistor is designed for general-purpose switching and amplification applications, offering a balance of high current gain and low noise figure.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | - | - | 65 | V |
| Collector-Emitter Breakdown Voltage (IC = 10 μA, VEB = 0) | V(BR)CES | - | - | 80 | V |
| Collector-Base Breakdown Voltage (IC = 10 μA) | V(BR)CBO | - | - | 80 | V |
| Emitter-Base Breakdown Voltage (IE = 1.0 μA) | V(BR)EBO | - | 6.0 | 6.0 | V |
| Collector Cutoff Current (VCB = 30 V) | ICBO | - | - | 15 nA | A |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | - | - | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | - | - | 0.7 | V |
| Maximum Junction Temperature | TJ | - | - | 150 | °C |
| Package Type | - | - | - | SOT23 (TO236AB) | - |
Key Features
- General-purpose NPN transistor suitable for switching and amplification applications.
- High collector-emitter breakdown voltage up to 65 V.
- High DC current gain (hFE) with multiple gain selections (e.g., 110, 200, 420).
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- Compact SOT23 (TO236AB) SMD plastic package, ideal for space-saving designs.
- Maximum junction temperature of 150°C, ensuring robust performance in various environments.
Applications
- General-purpose switching circuits.
- Amplifier circuits requiring high gain and low noise.
- Automotive and industrial control systems.
- Consumer electronics such as audio equipment and home appliances.
- Power management and voltage regulation circuits.
Q & A
- What is the collector-emitter breakdown voltage of the BC846BLT1 transistor?
The collector-emitter breakdown voltage (V(BR)CEO) is up to 65 V for the BC846 series.
- What are the typical DC current gain values for the BC846BLT1?
The DC current gain (hFE) for the BC846 series can range from 110 to 420, depending on the specific type (A, B, C).
- What is the maximum junction temperature for the BC846BLT1?
The maximum junction temperature (TJ) is 150°C.
- What package type is used for the BC846BLT1 transistor?
The BC846BLT1 is packaged in a SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package.
- What are some common applications for the BC846BLT1 transistor?
Common applications include general-purpose switching circuits, amplifier circuits, automotive and industrial control systems, and consumer electronics.
- What is the collector-emitter saturation voltage for the BC846BLT1?
The collector-emitter saturation voltage (VCE(sat)) is typically up to 0.25 V.
- How does the BC846BLT1 handle high temperatures?
The transistor is designed to operate up to a maximum junction temperature of 150°C, ensuring robust performance in various environments.
- Can the BC846BLT1 be used in high-frequency applications?
While it is primarily a general-purpose transistor, it can be used in some high-frequency applications due to its decent current-gain bandwidth product, but it is not optimized for very high-frequency use.
- Is the BC846BLT1 RoHS compliant?
Yes, the BC846BLT1 is RoHS compliant, making it suitable for use in environmentally friendly designs.
- Where can I find more detailed technical information about the BC846BLT1?
Detailed technical information can be found in the datasheets available on the onsemi and Nexperia websites.
