Overview
The 80SQ045NG is a high-performance Schottky Barrier rectifier diode produced by onsemi. This device is designed using state-of-the-art geometry features, including epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for applications requiring low-voltage, high-frequency operation, such as rectifiers in inverters, free-wheeling diodes, and polarity protection diodes.
Key Specifications
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 45 V |
| Working Peak Reverse Voltage | VRWM | 45 V |
| DC Blocking Voltage | VR | 45 V |
| Average Rectified Forward Current (TL = 75°C) | IO | 8.0 A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions) | IFSM | 140 A |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +125 °C |
| Maximum Instantaneous Forward Voltage (iF = 8.0 A, TL = 25°C) | vF | 0.55 V |
| Maximum Instantaneous Reverse Current @ Rated dc Voltage (TL = 25°C) | iR | 1.0 mA |
| Voltage Rate of Change (Rated VR) | dv/dt | 10 V/ns |
| Thermal Resistance, Junction-to-Lead | RθJL | 12 °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 °C/W |
Key Features
- High Current Capability: Up to 8.0 A average rectified forward current.
- Low Stored Charge, Majority Carrier Conduction: Ensures low power loss and high efficiency.
- Low Forward Voltage: Maximum instantaneous forward voltage of 0.55 V at 8.0 A.
- Highly Stable Oxide Passivated Junction: Provides reliability and stability in operation.
- Guard-Ring for Stress Protection: Enhances the device's durability against stress.
- High Surge Capacity: Non-repetitive peak surge current of 140 A.
- Pb-Free Devices: Compliant with RoHS standards.
- ESD Protection: Human Body Model > 4000 V (Class 3) and Machine Model > 400 V (Class C).
Applications
- Rectifiers in low-voltage, high-frequency inverters.
- Free-wheeling diodes.
- Polarity protection diodes.
- General-purpose rectification in power supplies and DC-DC converters.
Q & A
- What is the maximum repetitive reverse voltage of the 80SQ045NG?
The maximum repetitive reverse voltage (VRRM) is 45 V.
- What is the average rectified forward current of the 80SQ045NG at 75°C?
The average rectified forward current (IO) is 8.0 A at 75°C.
- What is the maximum instantaneous forward voltage of the 80SQ045NG?
The maximum instantaneous forward voltage (vF) is 0.55 V at 8.0 A and 25°C.
- Is the 80SQ045NG Pb-free?
- What is the operating temperature range of the 80SQ045NG?
The operating and storage junction temperature range is −65 to +125 °C.
- What is the thermal resistance from junction to ambient for the 80SQ045NG?
The thermal resistance from junction to ambient (RθJA) is 50 °C/W.
- What are some typical applications of the 80SQ045NG?
Typical applications include rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
- Does the 80SQ045NG have ESD protection?
- What is the non-repetitive peak surge current of the 80SQ045NG?
The non-repetitive peak surge current (IFSM) is 140 A.
- Is the 80SQ045NG recommended for new designs?
No, the 80SQ045NG is discontinued and not recommended for new designs. Please contact your onsemi representative for alternative options.
