Overview
The 2SC5706-TL-E is a bipolar transistor produced by onsemi, designed for high-performance applications. This NPN transistor is part of the 2SC5706 series and is packaged in the TP-FA (TO-252) package. It is known for its low collector-to-emitter saturation voltage, high-speed switching capabilities, and high allowable power dissipation, making it suitable for a variety of power management and driver applications.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | -50 to 100 | V |
| Collector-to-Emitter Voltage | VCES | - | -50 to 100 | V |
| Collector-to-Emitter Voltage | VCEO | - | -50 | V |
| Emitter-to-Base Voltage | VEBO | - | -6 | V |
| Collector Current | IC | - | -5 A | A |
| Collector Current (Pulse) | ICP | - | -7.5 A | A |
| Base Current | IB | - | -1.2 A | A |
| Collector Dissipation | PC | Tc=25°C | 15 W | W |
| Junction Temperature | Tj | - | 150 °C | °C |
| Storage Temperature | Tstg | - | -55 to +150 °C | °C |
| Collector Cutoff Current | ICBO | VCB=-40V, IE=0A | -1 μA | μA |
| Emitter Cutoff Current | IEBO | VEB=-4V, IC=0A | -1 μA | μA |
| DC Current Gain | hFE | VCE=-2V, IC=-500mA | 200 to 560 | - |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC=-1A, IB=-50mA | -115 to 90 mV | mV |
| Base-to-Emitter Saturation Voltage | VBE(sat) | VCE=-2V, IB=-100mA | -0.89 to 1.2 V | V |
Key Features
- Adoption of FBET and MBIT processes: Enhances the transistor's performance and reliability.
- Low collector-to-emitter saturation voltage: Reduces power losses and improves efficiency.
- High-speed switching: Suitable for applications requiring fast switching times.
- High allowable power dissipation: Supports high current and power handling.
- Large current capacitance: Ensures stable operation under high current conditions.
Applications
- DC/DC converters: Ideal for power conversion applications due to its high efficiency and low VCE(sat).
- Relay drivers: Suitable for driving relays in various control systems.
- Lamp drivers: Used in lighting control circuits.
- Motor drivers: Applicable in motor control and drive systems.
- Flash drivers: Can be used in flash lighting applications.
Q & A
- What is the maximum collector current of the 2SC5706-TL-E transistor?
The maximum collector current is -5 A, with a pulse current rating of -7.5 A.
- What is the collector-to-emitter saturation voltage of the 2SC5706-TL-E?
The collector-to-emitter saturation voltage (VCE(sat)) is typically between -115 mV to 90 mV at IC=-1A and IB=-50mA.
- What are the typical applications of the 2SC5706-TL-E transistor?
It is commonly used in DC/DC converters, relay drivers, lamp drivers, motor drivers, and flash drivers.
- What is the junction temperature rating of the 2SC5706-TL-E transistor?
The junction temperature rating is 150 °C.
- What is the storage temperature range for the 2SC5706-TL-E transistor?
The storage temperature range is -55 to +150 °C.
- What is the DC current gain (hFE) of the 2SC5706-TL-E transistor?
The DC current gain (hFE) is between 200 to 560 at VCE=-2V and IC=-500mA.
- What package type is the 2SC5706-TL-E transistor available in?
The transistor is available in the TP-FA (TO-252) package.
- Is the 2SC5706-TL-E transistor Pb-free and halogen-free?
Yes, the 2SC5706-TL-E is Pb-free and halogen-free.
- What is the base-to-emitter saturation voltage of the 2SC5706-TL-E transistor?
The base-to-emitter saturation voltage (VBE(sat)) is typically between -0.89 to 1.2 V at VCE=-2V and IB=-100mA.
- What are the dimensions of the TP-FA package for the 2SC5706-TL-E transistor?
The dimensions of the TP-FA package are specified in the datasheet, with key dimensions including 7.0 mm x 6.5 mm x 2.3 mm.
