Overview
The 2SB1202S-E is a bipolar transistor produced by onsemi, designed for a variety of applications requiring high performance and reliability. This transistor is part of the 2SB1202/2SD1802 series, which includes both PNP and NPN types. The 2SB1202S-E is specifically a PNP transistor, known for its low collector to emitter saturation voltage (VCE(sat)), fast switching speed, and robust current handling capabilities.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector to Base Voltage | VCBO | TA = 25°C | -60 | V |
| Collector to Emitter Voltage | VCEO | TA = 25°C | -50 | V |
| Emitter to Base Voltage | VEBO | TA = 25°C | -6 | V |
| Collector Current | IC | TA = 25°C | -3 | A |
| Collector Current (Pulse) | ICP | TA = 25°C | -6 | A |
| Collector Dissipation | PC | TC = 25°C | 1 | W |
| Junction Temperature | TJ | 150 | °C | |
| Storage Temperature | TSTG | -55 to +150 | °C | |
| DC Current Gain (hFE) | hFE | VCE = -2 V, IC = -100 mA | 100 to 560 | |
| Gain-Bandwidth Product | fT | VCE = -10 V, IC = -50 mA | 150 | MHz |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = -2 A, IB = -100 mA | -0.35 to -0.7 | V |
| Turn-On Time | ton | 70 | ns | |
| Fall Time | tf | 35 | ns |
Key Features
- Low Collector to Emitter Saturation Voltage (VCE(sat)): Ensures low power loss and high efficiency in switching applications.
- Fast Switching Speed: Characterized by a turn-on time of 70 ns and a fall time of 35 ns, making it suitable for high-speed applications.
- High Current Handling: Capable of handling collector currents up to 3 A and pulse currents up to 6 A.
- Small and Slim Package: Available in TP and TP-FA packages, making it easy to integrate into compact designs.
- Pb-Free and RoHS Compliant: Meets environmental regulations and is suitable for use in a wide range of applications.
- Adoption of FBET and MBIT Processes: Enhances the transistor's performance and reliability.
Applications
- Voltage Regulators: Used in voltage regulation circuits due to its low VCE(sat) and high current handling.
- Relay Drivers: Suitable for driving relays in various control systems.
- Lamp Drivers: Can be used to drive lamps in lighting systems.
- Electrical Equipment: Used in various electrical equipment requiring robust and reliable transistor performance.
Q & A
- What is the maximum collector to emitter voltage (VCEO) for the 2SB1202S-E transistor?
The maximum collector to emitter voltage (VCEO) is -50 V. - What is the typical DC current gain (hFE) for the 2SB1202S-E transistor?
The typical DC current gain (hFE) ranges from 100 to 560. - What is the collector to emitter saturation voltage (VCE(sat)) for the 2SB1202S-E transistor?
The collector to emitter saturation voltage (VCE(sat)) is between -0.35 V and -0.7 V. - What is the turn-on time (ton) and fall time (tf) for the 2SB1202S-E transistor?
The turn-on time (ton) is 70 ns, and the fall time (tf) is 35 ns. - Is the 2SB1202S-E transistor Pb-Free and RoHS compliant?
Yes, the 2SB1202S-E transistor is Pb-Free and RoHS compliant. - What are the typical applications of the 2SB1202S-E transistor?
The 2SB1202S-E transistor is typically used in voltage regulators, relay drivers, lamp drivers, and other electrical equipment. - What is the maximum collector current (IC) for the 2SB1202S-E transistor?
The maximum collector current (IC) is -3 A. - What is the maximum pulse collector current (ICP) for the 2SB1202S-E transistor?
The maximum pulse collector current (ICP) is -6 A. - What is the junction temperature (TJ) rating for the 2SB1202S-E transistor?
The junction temperature (TJ) rating is 150°C. - What are the storage temperature (TSTG) limits for the 2SB1202S-E transistor?
The storage temperature (TSTG) limits are from -55°C to +150°C.
