Overview
The 2N6520RLRAG is a high-voltage PNP transistor manufactured by ON Semiconductor. This device is part of the 2N6515, 2N6517, and 2N6520 series, which are designed for high-voltage applications. The 2N6520RLRAG is packaged in a TO-92 case and is lead-free, making it suitable for modern electronic designs that require compliance with environmental regulations.
This transistor is characterized by its high collector-emitter voltage (VCEO) and collector-base voltage (VCBO) ratings, making it ideal for applications where high voltage handling is necessary. It also features a moderate current handling capability and is designed to operate over a wide temperature range.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 350 | Vdc |
| Collector-Base Voltage | VCBO | 350 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Base Current | IB | 250 | mAdc |
| Collector Current - Continuous | IC | 500 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | °C/W |
| Thermal Resistance, Junction-to-Case | RθJC | 83.3 | °C/W |
| DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) | hFE | 20 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.30 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.75 | Vdc |
Key Features
- High Voltage Handling: The 2N6520RLRAG can handle high collector-emitter and collector-base voltages, making it suitable for applications requiring high voltage tolerance.
- Moderate Current Capability: With a continuous collector current rating of 500 mA, this transistor is suitable for a variety of applications where moderate current is required.
- Wide Temperature Range: The device operates over a temperature range of -55°C to +150°C, ensuring reliability in diverse environmental conditions.
- Lead-Free Packaging: Compliant with environmental regulations, the TO-92 package is lead-free, making it a preferred choice for modern electronic designs.
- Good Switching Characteristics: The transistor has reasonable turn-on and turn-off times, making it suitable for switching applications.
Applications
- Power Amplifiers: The high voltage and current handling capabilities make the 2N6520RLRAG suitable for power amplifier circuits.
- Switching Circuits: The transistor's switching characteristics make it a good choice for various switching applications, including power supplies and motor control circuits.
- High Voltage Regulation: It can be used in high voltage regulation circuits where the ability to handle high voltages is crucial.
- Automotive Electronics: The wide temperature range and high reliability make it suitable for use in automotive electronics.
- Industrial Control Systems: The transistor can be used in industrial control systems that require high voltage and moderate current handling.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the 2N6520RLRAG transistor?
The maximum collector-emitter voltage (VCEO) for the 2N6520RLRAG transistor is 350 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current rating for the 2N6520RLRAG transistor is 500 mA.
- What is the operating temperature range for the 2N6520RLRAG?
The operating temperature range for the 2N6520RLRAG is -55°C to +150°C.
- Is the 2N6520RLRAG lead-free?
- What are the typical applications for the 2N6520RLRAG transistor?
The 2N6520RLRAG is typically used in power amplifiers, switching circuits, high voltage regulation, automotive electronics, and industrial control systems.
- What is the thermal resistance, junction-to-ambient (RθJA) for this transistor?
The thermal resistance, junction-to-ambient (RθJA) for the 2N6520RLRAG is 200 °C/W.
- What is the DC current gain (hFE) for the 2N6520RLRAG at IC = 100 mAdc and VCE = 10 Vdc?
The DC current gain (hFE) for the 2N6520RLRAG at IC = 100 mAdc and VCE = 10 Vdc is 20.
- What is the collector-emitter saturation voltage (VCE(sat)) for the 2N6520RLRAG?
The collector-emitter saturation voltage (VCE(sat)) for the 2N6520RLRAG is 0.30 Vdc at IC = 10 mAdc and IB = 1.0 mAdc.
- What is the base-emitter saturation voltage (VBE(sat)) for the 2N6520RLRAG?
The base-emitter saturation voltage (VBE(sat)) for the 2N6520RLRAG is 0.75 Vdc at IC = 10 mAdc and IB = 1.0 mAdc.
- What are the turn-on and turn-off times for the 2N6520RLRAG transistor?
The turn-on time (ton) is approximately 200 μs, and the turn-off time (toff) is approximately 3.5 μs.
