PMBT5401,235
  • Share:

NXP USA Inc. PMBT5401,235

Manufacturer No:
PMBT5401,235
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 150V 0.3A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBT5401,235 is a PNP high-voltage transistor manufactured by NXP USA Inc. This transistor is packaged in a SOT23 (TO-236AB) surface mount package, making it suitable for a variety of applications where space is limited. It is designed to handle high voltages and moderate currents, making it a versatile component in both industrial and consumer electronics.

Key Specifications

ParameterValue
Transistor TypePNP
Maximum Collector-Emitter Voltage (Vceo)150 V
Maximum Collector Current (Ic)300 mA
Maximum Power Dissipation (Ptot)250 mW
Transition Frequency (ft)300 MHz
Package TypeSOT23 (TO-236AB)
Mounting TypeSurface Mount

Key Features

  • High voltage capability up to 150 V
  • Low current operation with a maximum collector current of 300 mA
  • High transition frequency of 300 MHz
  • Compact SOT23 package for space-efficient designs
  • Suitable for high-frequency applications

Applications

  • Industrial electronics
  • Consumer electronics
  • Power management circuits
  • Automotive systems
  • LED lighting and control circuits

Q & A

  1. What is the maximum collector-emitter voltage of the PMBT5401,235 transistor?
    The maximum collector-emitter voltage (Vceo) is 150 V.
  2. What is the maximum collector current of the PMBT5401,235 transistor?
    The maximum collector current (Ic) is 300 mA.
  3. What is the package type of the PMBT5401,235 transistor?
    The transistor is packaged in a SOT23 (TO-236AB) surface mount package.
  4. What is the transition frequency of the PMBT5401,235 transistor?
    The transition frequency (ft) is 300 MHz.
  5. What are some common applications of the PMBT5401,235 transistor?
    Common applications include industrial electronics, consumer electronics, power management circuits, automotive systems, and LED lighting and control circuits.
  6. Is the PMBT5401,235 transistor suitable for high-frequency applications?
    Yes, the transistor is suitable for high-frequency applications due to its high transition frequency.
  7. What is the maximum power dissipation of the PMBT5401,235 transistor?
    The maximum power dissipation (Ptot) is 250 mW.
  8. What is the NPN complement of the PMBT5401,235 transistor?
    The NPN complement of the PMBT5401,235 transistor is the PMBT5550.
  9. Is the PMBT5401,235 transistor RoHS compliant?
    Yes, the transistor is RoHS compliant.
  10. Where can I find detailed specifications and datasheets for the PMBT5401,235 transistor?
    Detailed specifications and datasheets can be found on the official NXP website, as well as on distributor websites such as Digi-Key and Mouser.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):300 mA
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:250 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
358

Please send RFQ , we will respond immediately.

Same Series
PMBT5401,235
PMBT5401,235
TRANS PNP 150V 0.3A SOT23

Similar Products

Part Number PMBT5401,235 PMBT4401,235 PMBT5401,215
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 300 mA 600 mA 300 mA
Voltage - Collector Emitter Breakdown (Max) 150 V 40 V 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 750mV @ 50mA, 500mA 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 100 @ 150mA, 1V 60 @ 10mA, 5V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 300MHz 250MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) TO-236AB SOT-23 (TO-236AB)

Related Product By Categories

BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BSV52LT1G
BSV52LT1G
onsemi
TRANS NPN 12V 0.1A SOT23-3
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
MCIMX7U3DVK07SC
MCIMX7U3DVK07SC
NXP USA Inc.
IC I.MX 7ULP VFBGA 361
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
TJA1049TK/3/1Z
TJA1049TK/3/1Z
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8HVSON
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
PCF7922ATT/D1AC07J
PCF7922ATT/D1AC07J
NXP USA Inc.
RF TRANSMITTER 20TSSOP
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX