Overview
The BUK9Y12-40E/GFX is an N-channel MOSFET produced by NXP USA Inc. This device is part of the LFPAK56 family, known for its high performance and reliability in various power management applications. The MOSFET features a low on-state resistance of 12 mΩ and is designed to operate at a maximum drain-source voltage of 40 V. It is packaged in a Power-SO8 (LFPAK56) package, which is a plastic single-ended surface-mounted package with 4 leads.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (drain-source voltage) | Tj ≥ 25 °C; Tj ≤ 175 °C | - | - | 40 | V |
| VGS (gate-source voltage) | Tj ≤ 175 °C; Pulsed | -15 | - | 15 | V |
| ID (drain current) | Tmb = 25 °C; VGS = 5 V | - | - | 52 | A |
| IDM (peak drain current) | Tmb = 25 °C; pulsed; tp ≤ 10 µs | - | - | 208 | A |
| Ptot (total power dissipation) | Tmb = 25 °C | - | - | 65 | W |
| Tstg (storage temperature) | - | -55 | - | 175 | °C |
| Tj (junction temperature) | - | -55 | - | 175 | °C |
| RDS(on) (on-state resistance) | Tj = 25 °C; VGS = 5 V | - | 12 | - | mΩ |
Key Features
- Low on-state resistance (RDS(on)) of 12 mΩ, enhancing efficiency in power management applications.
- High drain current capability of up to 52 A, suitable for high-power applications.
- Maximum drain-source voltage of 40 V, providing robustness against voltage spikes.
- Logic level gate drive, making it compatible with a wide range of control signals.
- Avalanche ruggedness with a non-repetitive drain-source avalanche energy (EDS(AL)S) of up to 23 mJ.
- Compact LFPAK56 (Power-SO8) package, ideal for space-constrained designs.
Applications
- Power management in automotive systems, such as battery management and motor control.
- Industrial power supplies and DC-DC converters.
- Consumer electronics, including power adapters and battery chargers.
- Renewable energy systems, such as solar and wind power inverters.
- High-performance computing and data center power management.
Q & A
- What is the maximum drain-source voltage of the BUK9Y12-40E/GFX MOSFET?
The maximum drain-source voltage is 40 V.
- What is the typical on-state resistance of the BUK9Y12-40E/GFX?
The typical on-state resistance (RDS(on)) is 12 mΩ.
- What is the maximum drain current of the BUK9Y12-40E/GFX?
The maximum drain current (ID) is 52 A.
- What is the package type of the BUK9Y12-40E/GFX?
The package type is LFPAK56 (Power-SO8).
- What is the junction temperature range of the BUK9Y12-40E/GFX?
The junction temperature range is -55 °C to 175 °C.
- Is the BUK9Y12-40E/GFX avalanche rugged?
Yes, it has a non-repetitive drain-source avalanche energy (EDS(AL)S) of up to 23 mJ.
- What are some common applications of the BUK9Y12-40E/GFX?
Common applications include automotive systems, industrial power supplies, consumer electronics, renewable energy systems, and high-performance computing.
- What is the storage temperature range for the BUK9Y12-40E/GFX?
The storage temperature range is -55 °C to 175 °C.
- What is the total power dissipation of the BUK9Y12-40E/GFX?
The total power dissipation (Ptot) is up to 65 W at Tmb = 25 °C.
- Is the BUK9Y12-40E/GFX suitable for high-frequency applications?
Yes, it has fast switching times, with turn-on delay time (td(on)) of 9 ns and turn-off delay time (td(off)) of 13 ns.
