BC857CT,115
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NXP USA Inc. BC857CT,115

Manufacturer No:
BC857CT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CT,115 is a single bipolar transistor produced by NXP USA Inc. This component is part of NXP's extensive range of discrete semiconductor products. Although the BC857CT,115 is currently listed as obsolete and no longer manufactured, it remains relevant for understanding and replacing similar components in existing designs.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
PackageDFN1010B
Collector-Base Voltage (Vceo)45 V
Collector-Emitter Voltage (Vceo)45 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)100 mA
Base Current (Ib)50 mA
Current Gain (hFE)100-300 @ Ic = 2 mA, Vce = 5 V
Operating Temperature Range-55°C to 150°C

Key Features

  • Low Noise and High Current Gain: The BC857CT,115 is known for its low noise characteristics and high current gain, making it suitable for a variety of applications requiring stable and reliable performance.
  • Compact Package: The DFN1010B package is compact and suitable for space-constrained designs, offering a balance between performance and size.
  • Wide Operating Temperature Range: The transistor can operate over a wide temperature range, making it versatile for different environmental conditions.
  • Automotive and Industrial Standards: Although specific to this model, NXP's commitment to automotive and industrial standards (such as AEC-Q101) ensures high-quality and reliable components.

Applications

  • General-Purpose Amplification: Suitable for general-purpose amplification in various electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low noise characteristics.
  • Audio and Signal Processing: Applicable in audio and signal processing circuits where low noise is crucial.
  • Automotive and Industrial Control: Although obsolete, similar models from NXP are used in automotive and industrial control systems due to their reliability and performance.

Q & A

  1. What is the BC857CT,115 transistor type?
    The BC857CT,115 is a PNP Bipolar Junction Transistor (BJT).
  2. What is the package type of the BC857CT,115?
    The package type is DFN1010B.
  3. What is the collector-base voltage (Vceo) of the BC857CT,115?
    The collector-base voltage (Vceo) is 45 V.
  4. What is the current gain (hFE) of the BC857CT,115?
    The current gain (hFE) is 100-300 @ Ic = 2 mA, Vce = 5 V.
  5. What is the operating temperature range of the BC857CT,115?
    The operating temperature range is -55°C to 150°C.
  6. Is the BC857CT,115 still in production?
    No, the BC857CT,115 is currently listed as obsolete and no longer manufactured.
  7. What are some common applications for the BC857CT,115?
    General-purpose amplification, switching circuits, audio and signal processing, and automotive/industrial control systems.
  8. What are the key features of the BC857CT,115?
    Low noise, high current gain, compact package, and wide operating temperature range.
  9. Why is the BC857CT,115 no longer manufactured?
    The specific reasons for its obsolescence are not detailed, but it may be due to advancements in technology or market demand for newer models.
  10. Where can I find substitutes for the BC857CT,115?
    Substitutes can be found through distributors like Digi-Key, Mouser, or by consulting with NXP for recommended alternatives.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number BC857CT,115 BC857CW,115 BC857T,115 BC857BT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 600mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 150 mW 200 mW 150 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75 SOT-323 SC-75 SC-75

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