Overview
The BC856B/DG/B2215 is a high-performance PNP small signal bipolar transistor manufactured by NXP USA Inc. This transistor is designed for general-purpose amplifier applications and is widely used in various electronic circuits due to its robust specifications and reliability.
It is housed in the SOT23 package, which is ideal for low power surface mount applications. The transistor is lead-free, halogen-free, and RoHS compliant, making it suitable for modern electronic designs that require environmental compliance.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Voltage (VCEO) | -65 | V |
Collector-Base Voltage (VCBO) | -80 | V |
Emitter-Base Voltage (VEB0) | -5.0 | V |
Collector Current (IC) - Continuous | -100 | mA |
Collector Current (IC) - Peak (1 ms pulse) | -200 | mA |
DC Current Gain (hFE) at IC = -2 mA, VCE = -5 V | 220 - 475 | - |
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = -10 mA, IB = -0.5 mA | -0.3 - 0.65 | V |
Base-Emitter Saturation Voltage (VBE(sat)) at IC = -10 mA, IB = -0.5 mA | -0.7 - 0.9 | V |
Total Power Dissipation (Ptot) at Tamb ≤ 25°C | 250 | mW |
Operating Ambient Temperature (Tamb) | -65 to +150 | °C |
Junction Temperature (Tj) | -150 | °C |
Key Features
- General Purpose Amplifier Applications: Designed for general-purpose amplifier applications, making it versatile for various electronic circuits.
- SOT23 Package: Housed in the SOT23 package, suitable for low power surface mount applications.
- Environmental Compliance: Lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High DC Current Gain: Offers a high DC current gain (hFE) range of 220 to 475 at IC = -2 mA and VCE = -5 V.
- Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in amplifier circuits.
- Wide Operating Temperature Range: Operates over a wide ambient temperature range of -65°C to +150°C.
Applications
- General Purpose Amplifiers: Suitable for use in general-purpose amplifier circuits due to its robust specifications.
- Switching Circuits: Can be used in switching circuits where low saturation voltages are beneficial.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Consumer Electronics: Used in various consumer electronic devices where reliability and environmental compliance are crucial.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC856B/DG/B2215 transistor?
The collector-emitter voltage (VCEO) of the BC856B/DG/B2215 transistor is -65 V.
- What is the package type of the BC856B/DG/B2215 transistor?
The BC856B/DG/B2215 transistor is housed in the SOT23 package.
- Is the BC856B/DG/B2215 transistor RoHS compliant?
Yes, the BC856B/DG/B2215 transistor is lead-free, halogen-free, and RoHS compliant).
- What is the maximum collector current (IC) of the BC856B/DG/B2215 transistor?
The maximum collector current (IC) of the BC856B/DG/B2215 transistor is -100 mA).
- What is the DC current gain (hFE) range of the BC856B/DG/B2215 transistor?
The DC current gain (hFE) range of the BC856B/DG/B2215 transistor is 220 to 475 at IC = -2 mA and VCE = -5 V).
- What is the operating ambient temperature range of the BC856B/DG/B2215 transistor?
The operating ambient temperature range of the BC856B/DG/B2215 transistor is -65°C to +150°C).
- Is the BC856B/DG/B2215 transistor suitable for automotive applications?
Yes, the BC856B/DG/B2215 transistor is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements).
- What is the total power dissipation (Ptot) of the BC856B/DG/B2215 transistor at Tamb ≤ 25°C?
The total power dissipation (Ptot) of the BC856B/DG/B2215 transistor at Tamb ≤ 25°C is 250 mW).
- What are the typical applications of the BC856B/DG/B2215 transistor?
The BC856B/DG/B2215 transistor is typically used in general-purpose amplifier circuits, switching circuits, automotive electronics, and consumer electronics).
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC856B/DG/B2215 transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BC856B/DG/B2215 transistor is -0.3 to -0.65 V at IC = -10 mA and IB = -0.5 mA).
- What is the base-emitter saturation voltage (VBE(sat)) of the BC856B/DG/B2215 transistor?
The base-emitter saturation voltage (VBE(sat)) of the BC856B/DG/B2215 transistor is -0.7 to -0.9 V at IC = -10 mA and IB = -0.5 mA).