BC856B/DG/B2235
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NXP USA Inc. BC856B/DG/B2235

Manufacturer No:
BC856B/DG/B2235
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BC856B/DG/B2235 is a PNP general-purpose bipolar transistor manufactured by NXP USA Inc. This transistor is designed for low-power surface mount applications and is housed in the SOT23 (TO-236AB) package. It is part of the BC856 series, which includes various versions with different current gain characteristics. The BC856B is widely used in general-purpose amplifier and switching applications due to its robust specifications and reliability.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)-65V
Collector-Base Voltage (VCBO)-80V
Emitter-Base Voltage (VEB0)-5.0V
Collector Current (IC) - Continuous-100mA
DC Current Gain (hFE)220 - 475
Collector-Emitter Saturation Voltage (VCE(sat))-0.3 - 0.65V
Base-Emitter Saturation Voltage (VBE(sat))-0.7 - 0.9V
Maximum Junction Temperature (TJ)150°C
Package TypeSOT23 (TO-236AB)

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • Low power surface mount design in SOT23 package.
  • High current gain (hFE) range of 220 to 475.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
  • General-purpose amplifier and switching capabilities.

Applications

The BC856B/DG/B2235 transistor is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Switching circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Industrial control systems.
  • Consumer electronics such as mobile devices and wearables.

Q & A

  1. What is the collector-emitter voltage rating of the BC856B transistor?
    The collector-emitter voltage (VCEO) is rated at -65 V.
  2. What is the package type of the BC856B/DG/B2235 transistor?
    The transistor is housed in the SOT23 (TO-236AB) package.
  3. What is the maximum collector current of the BC856B transistor?
    The maximum continuous collector current (IC) is -100 mA.
  4. Is the BC856B transistor RoHS compliant?
    Yes, the BC856B transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  5. What are the typical applications of the BC856B transistor?
    The transistor is used in general-purpose amplifier and switching circuits, as well as in automotive and industrial electronics.
  6. What is the maximum junction temperature of the BC856B transistor?
    The maximum junction temperature (TJ) is 150°C.
  7. Is the BC856B transistor suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  8. What is the range of DC current gain (hFE) for the BC856B transistor?
    The DC current gain (hFE) ranges from 220 to 475.
  9. What are the base-emitter and collector-emitter saturation voltages of the BC856B transistor?
    The base-emitter saturation voltage (VBE(sat)) is -0.7 to -0.9 V, and the collector-emitter saturation voltage (VCE(sat)) is -0.3 to -0.65 V.
  10. Where can I purchase the BC856B/DG/B2235 transistor?
    You can purchase the transistor from authorized distributors such as Digi-Key, Mouser, and Nexperia’s official distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856B/DG/B2235 BC856B/DG/B3235 BC856B/DG/B2215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - 65 V -
Vce Saturation (Max) @ Ib, Ic - 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 125 @ 2mA, 5V -
Power - Max - 250 mW -
Frequency - Transition - 100MHz -
Operating Temperature - 150°C (TJ) -
Mounting Type - Surface Mount -
Package / Case - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - TO-236AB -

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