Overview
The BC856B/DG/B3235 is a small signal bipolar transistor manufactured by NXP USA Inc. This transistor is part of the BC856 series and is designed for general-purpose applications. It features a PNP configuration, making it suitable for a wide range of electronic circuits. The transistor is housed in a SOT23-3 package, which is a surface mount type, facilitating easy integration into modern PCB designs.
Key Specifications
| Specification | Value |
|---|---|
| Transistor Type | PNP |
| Current-Collector (Ic) Max | 100 mA |
| Voltage-Collector Emitter Breakdown (Vceo) Max | 65 V |
| Vce Saturation (Max) @ Ib/Ic | 650 mV @ 5 mA, 100 mA |
| Current-Collector Cutoff (Max) | 15 nA (ICBO) |
| D.C. Current Gain (hFE) Min @ Ic/Vce | 125 @ 2 mA, 5 V |
| Power (Max) | 250 mW |
| Frequency-Transition | 100 MHz |
| Operating Temperature (TJ) | 150°C |
| Mounting Type | Surface Mount |
| Package/Case | SOT23-3 |
Key Features
- PNP Configuration: Suitable for general-purpose applications in electronic circuits.
- High Voltage Capability: Up to 65 V collector-emitter breakdown voltage.
- Low Saturation Voltage: 650 mV at 5 mA and 100 mA collector current.
- High Current Gain: Minimum DC current gain of 125 at 2 mA and 5 V.
- Compact Package: SOT23-3 surface mount package for easy integration into PCB designs.
- High Frequency Capability: Transition frequency of 100 MHz.
Applications
The BC856B/DG/B3235 transistor is versatile and can be used in a variety of applications, including:
- Amplifier Circuits: Due to its high current gain and low saturation voltage, it is suitable for amplifier stages in audio and signal processing circuits.
- Switching Circuits: Its high transition frequency and low collector-emitter saturation voltage make it ideal for switching applications.
- General-Purpose Electronics: It can be used in various general-purpose electronic circuits where a reliable PNP transistor is required.
Q & A
- What is the maximum collector current of the BC856B/DG/B3235 transistor?
The maximum collector current is 100 mA. - What is the collector-emitter breakdown voltage of the BC856B/DG/B3235 transistor?
The collector-emitter breakdown voltage is 65 V. - What is the typical Vce saturation voltage of the BC856B/DG/B3235 transistor?
The typical Vce saturation voltage is 650 mV at 5 mA and 100 mA collector current. - What is the minimum DC current gain (hFE) of the BC856B/DG/B3235 transistor?
The minimum DC current gain is 125 at 2 mA and 5 V. - What is the transition frequency of the BC856B/DG/B3235 transistor?
The transition frequency is 100 MHz. - What is the operating temperature range of the BC856B/DG/B3235 transistor?
The operating temperature range is up to 150°C (TJ). - What is the package type of the BC856B/DG/B3235 transistor?
The package type is SOT23-3, which is a surface mount type. - Is the BC856B/DG/B3235 transistor RoHS compliant?
Yes, the BC856B/DG/B3235 transistor is RoHS compliant. - What are some common applications of the BC856B/DG/B3235 transistor?
It is commonly used in amplifier circuits, switching circuits, and general-purpose electronic circuits. - Where can I find the datasheet for the BC856B/DG/B3235 transistor?
The datasheet can be found on the official NXP website or through authorized distributors like Ovaga Technologies and JLCPCB.
