Overview
The BC847BW/DG,115 is a 45 V, 100 mA NPN general-purpose transistor produced by NXP USA Inc., now part of Nexperia. This transistor is housed in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. It is part of the BC847 series, which offers various gain selections, making it versatile for different design requirements.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 45 | V |
| VEB0 (Emitter-Base Voltage) | Open collector | - | - | 6 | V |
| IC (Collector Current) | - | - | - | 100 | mA |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 200 | mA |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 200 | mW |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| Tamb (Ambient Temperature) | - | -65 | - | 150 | °C |
| hFE (DC Current Gain) | - | 200 | - | 450 | - |
| fT (Transition Frequency) | - | - | - | 100 | MHz |
Key Features
- Compact Package: The BC847BW is packaged in the SOT323 (SC-70) SMD plastic package, which is very small and suitable for space-constrained designs.
- General-Purpose Use: This transistor is designed for general-purpose switching and amplification applications.
- Multiple Gain Selections: The BC847 series offers different gain selections (A, B, C), allowing designers to choose the best fit for their specific application.
- High Temperature Capability: The transistor can operate up to a junction temperature of 150 °C.
- Low Power Dissipation: The total power dissipation is 200 mW at an ambient temperature of 25 °C.
Applications
The BC847BW transistor is versatile and can be used in a variety of applications across different industries, including:
- Automotive Systems: For various automotive electronics due to its robustness and reliability.
- Industrial Control Systems: In control circuits, switching applications, and amplification stages.
- Consumer Electronics: In audio amplifiers, power supplies, and other consumer electronic devices.
- Mobile and Wearable Devices: Due to its small package size and low power consumption.
Q & A
- What is the maximum collector-emitter voltage of the BC847BW transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the package type of the BC847BW transistor?
The BC847BW transistor is packaged in the SOT323 (SC-70) SMD plastic package.
- What are the typical applications of the BC847BW transistor?
The BC847BW transistor is used in general-purpose switching and amplification applications across various industries.
- What is the maximum collector current of the BC847BW transistor?
The maximum collector current (IC) is 100 mA.
- What is the peak collector current of the BC847BW transistor?
The peak collector current (ICM) is 200 mA for a single pulse with tp ≤ 1 ms.
- What is the total power dissipation of the BC847BW transistor at 25 °C ambient temperature?
The total power dissipation (Ptot) is 200 mW at an ambient temperature of 25 °C.
- What is the junction temperature range of the BC847BW transistor?
The junction temperature (Tj) range is up to 150 °C.
- What are the gain selections available for the BC847 series?
The BC847 series offers different gain selections: A, B, and C.
- Is the BC847BW transistor automotive qualified?
No, the BC847BW transistor is not specifically listed as automotive qualified, but it can be used in automotive systems due to its robustness and reliability.
- Where can I find more detailed information about the BC847BW transistor?
More detailed information can be found in the full data sheet available from Nexperia or through their official distributors.
