BC817-16W,115
  • Share:

NXP USA Inc. BC817-16W,115

Manufacturer No:
BC817-16W,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BC817-16W - SMALL S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-16W,115 is a 45 V, 500 mA NPN general-purpose transistor manufactured by Nexperia (previously part of NXP USA Inc.). This transistor is packaged in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. It is designed for general-purpose switching and amplification and is part of Nexperia’s extensive portfolio of bipolar transistors.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open base; IC = 10 mA - - 45 V
VCB0 (Collector-Base Voltage) Open emitter - - 50 V
VEB0 (Emitter-Base Voltage) Open collector - - 5 V
IC (Collector Current) - - - 500 mA
ICM (Peak Collector Current) - - - 1 A
IB (Peak Base Current) - - - 200 mA
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 200 mW
Tj (Junction Temperature) - - - 150 °C
fT (Transition Frequency) IC = 10 mA; VCE = 5 V; f = 100 MHz 100 - - MHz
hFE (DC Current Gain) IC = 100 mA; VCE = 1 V 100 - 250 -

Key Features

  • High Current Capability: The BC817-16W can handle up to 500 mA of collector current and 1 A of peak collector current.
  • Low Power Consumption: Total power dissipation is 200 mW at an ambient temperature of 25 °C.
  • Compact Package: The transistor is packaged in a small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package, ideal for space-constrained designs.
  • General-Purpose Use: Suitable for both switching and amplification applications.
  • Multiple Current Gain Selections: Available with different current gain selections (100-250 for BC817-16W).
  • High Transition Frequency: Transition frequency of 100 MHz, making it suitable for high-frequency applications.

Applications

The BC817-16W transistor is versatile and can be used in a variety of applications across different industries, including:

  • Automotive: For various automotive electronic systems.
  • Industrial: In control circuits, power supplies, and other industrial electronics.
  • Consumer Electronics: In audio amplifiers, switching circuits, and other consumer electronic devices.
  • Mobile and Wearable Devices: Due to its compact size and low power consumption, it is suitable for mobile and wearable electronics.
  • Computing and Power Systems: Used in power management and control circuits within computing systems.

Q & A

  1. What is the maximum collector-emitter voltage of the BC817-16W transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current of the BC817-16W transistor?

    The maximum collector current (IC) is 500 mA.

  3. What is the package type of the BC817-16W transistor?

    The transistor is packaged in a SOT323 (SC70) Surface-Mounted Device (SMD) plastic package.

  4. What are the typical applications of the BC817-16W transistor?

    It is used in general-purpose switching and amplification, and can be applied in automotive, industrial, consumer electronics, mobile, and computing systems.

  5. What is the transition frequency of the BC817-16W transistor?

    The transition frequency (fT) is 100 MHz.

  6. What is the maximum junction temperature of the BC817-16W transistor?

    The maximum junction temperature (Tj) is 150 °C.

  7. Is the BC817-16W transistor automotive qualified?

    No, the BC817-16W is not specifically listed as automotive qualified in the provided sources.

  8. What is the total power dissipation of the BC817-16W transistor at 25 °C ambient temperature?

    The total power dissipation (Ptot) is 200 mW at an ambient temperature of 25 °C.

  9. What are the current gain ranges for the BC817-16W transistor?

    The DC current gain (hFE) ranges from 100 to 250.

  10. How can I order samples of the BC817-16W transistor?

    Samples can be ordered via Nexperia’s sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.02
37,613

Please send RFQ , we will respond immediately.

Same Series
BC817-25W,115
BC817-25W,115
TRANS NPN 45V 0.5A SOT323
BC817-25W,135
BC817-25W,135
TRANS NPN 45V 0.5A SOT323
BC817W,115
BC817W,115
TRANS NPN 45V 0.5A SOT323
BC817-16W,115
BC817-16W,115
NOW NEXPERIA BC817-16W - SMALL S
BC817-40W,115
BC817-40W,115
TRANS NPN 45V 0.5A SOT323
BC817-40W,135
BC817-40W,135
TRANS NPN 45V 0.5A SOT323
BC817W,135
BC817W,135
TRANS NPN 45V 0.5A SOT323
BC817-25W/MIX
BC817-25W/MIX
TRANS NPN 45V 0.5A SOT323
BC817-40W/MIF
BC817-40W/MIF
TRANS NPN 45V 0.5A SOT323
BC817-40W/MIX
BC817-40W/MIX
TRANS NPN 45V 0.5A SOT323

Similar Products

Part Number BC817-16W,115 BC817-16W,135
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323

Related Product By Categories

2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

PMEG45U10EPD146
PMEG45U10EPD146
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MCIMX6S5EVM10AB
MCIMX6S5EVM10AB
NXP USA Inc.
IC MPU I.MX6S 1.0GHZ 624MAPBGA
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER