BC51PAS115
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NXP USA Inc. BC51PAS115

Manufacturer No:
BC51PAS115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC51PAS115 is a small signal bipolar transistor manufactured by NXP USA Inc. This transistor is designed to offer high reliability and efficiency in various electronic applications. It features a compact DFN (Dual Flat No-leads) package, which reduces parasitic inductance and capacitance, and improves thermal resistance. This design allows for higher reliability and more design flexibility due to its small form factor.

Key Specifications

ParameterValue
TypeSmall Signal Bipolar Transistor
PackageDFN (Dual Flat No-leads)
PolarityNPN
Collector-Base Voltage (Vcb)30V
Collector-Emitter Voltage (Vce)30V
Emitter-Base Voltage (Veb)5V
Collector Current (Ic)0.5A
Power Dissipation (Pd)As specified by the datasheet
Operating Temperature Range-55°C to 150°C

Key Features

  • Compact DFN Package: Reduces parasitic inductance and capacitance, and improves thermal resistance.
  • High Reliability: Designed for higher reliability in various applications.
  • Small Form Factor: Uses about 75% less board space, allowing more design flexibility.
  • Low Thermal Resistance: Enhances the overall performance and lifespan of the transistor.

Applications

The BC51PAS115 transistor is suitable for a wide range of applications, including:

  • General Purpose Amplification: Ideal for use in amplifier circuits due to its small signal capabilities.
  • Switching Circuits: Can be used in switching applications where low power consumption and high reliability are required.
  • Automotive Electronics: Suitable for use in automotive systems due to its robustness and reliability.
  • Consumer Electronics: Used in various consumer electronic devices where compact and reliable transistor performance is necessary.

Q & A

  1. What is the BC51PAS115 transistor?
    The BC51PAS115 is a small signal bipolar transistor manufactured by NXP USA Inc.
  2. What package type does the BC51PAS115 use?
    The BC51PAS115 uses a DFN (Dual Flat No-leads) package.
  3. What is the collector current rating of the BC51PAS115?
    The collector current rating is 0.5A.
  4. What are the key benefits of the DFN package?
    The DFN package reduces parasitic inductance and capacitance, improves thermal resistance, and uses less board space.
  5. What are some common applications for the BC51PAS115?
    General purpose amplification, switching circuits, automotive electronics, and consumer electronics.
  6. What is the operating temperature range of the BC51PAS115?
    The operating temperature range is -55°C to 150°C.
  7. Is the BC51PAS115 suitable for high-power applications?
    No, it is designed for small signal applications.
  8. Where can I find detailed specifications for the BC51PAS115?
    Detailed specifications can be found in the datasheet available on NXP's official website or through authorized distributors like Mouser Electronics.
  9. What is the polarity of the BC51PAS115 transistor?
    The BC51PAS115 is an NPN transistor.
  10. How does the BC51PAS115 contribute to design flexibility?
    It uses about 75% less board space due to its compact DFN package, allowing more design flexibility.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC51PAS115 BC53PAS115 BC52PAS115 BC51PA,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type - - - PNP
Current - Collector (Ic) (Max) - - - 1 A
Voltage - Collector Emitter Breakdown (Max) - - - 45 V
Vce Saturation (Max) @ Ib, Ic - - - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) - - - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - - - 63 @ 150mA, 2V
Power - Max - - - 420 mW
Frequency - Transition - - - 145MHz
Operating Temperature - - - 150°C (TJ)
Mounting Type - - - Surface Mount
Package / Case - - - 3-PowerUDFN
Supplier Device Package - - - 3-HUSON (2x2)

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