PMDPB58UPE,115
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Nexperia USA Inc. PMDPB58UPE,115

Manufacturer No:
PMDPB58UPE,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3.6A HUSON6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB58UPE,115 is a 20 V dual P-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia’s extensive portfolio of power MOSFETs, designed to meet the demands of various electronic applications. The PMDPB58UPE is housed in a leadless medium power DFN2020-6 (SOT1118) package, making it suitable for space-constrained designs while maintaining high performance.

Nexperia’s commitment to innovation and sustainability ensures that this MOSFET sets benchmarks in efficiency, enabling the development of energy-efficient and cutting-edge solutions across multiple industries, including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Value
Type number PMDPB58UPE
Package DFN2020-6 (SOT1118)
Channel type P-channel
Number of transistors 2
VDS [max] (V) -20
VGS [max] (V) 8
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) 67
RDSon [max] @ VGS = 2.5 V (mΩ) 95
VESD (kV) 2
Tj [max] (°C) 150
ID [max] (A) -4.5
QGD [typ] (nC) 0.9
QG(tot) [typ] @ VGS = 4.5 V (nC) 6.3
Ptot [max] (W) 0.515
VGSth [typ] (V) -0.7
Automotive qualified No
Ciss [typ] (pF) 804
Coss [typ] (pF) 95

Key Features

  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • Low Threshold Voltage: Offers a low threshold voltage, making it suitable for low-voltage applications.
  • Very Fast Switching: Enables very fast switching times, ideal for high-speed applications.
  • 2 kV ElectroStatic Discharge (ESD) Protection: Provides robust ESD protection to ensure reliability in harsh environments.
  • Compact Package: Housed in a leadless medium power DFN2020-6 (SOT1118) package, optimizing space in designs.

Applications

  • Relay Driver: Suitable for driving relays in various applications.
  • High-Speed Line Driver: Ideal for high-speed line driving due to its fast switching capabilities.
  • High-Side Load Switch: Can be used as a high-side load switch in power management circuits.
  • Switching Circuits: Applicable in various switching circuits requiring low on-resistance and fast switching times.
  • Automotive and Industrial: Finds applications in automotive and industrial sectors due to its robustness and reliability.

Q & A

  1. What is the maximum drain-source voltage (VDS) for the PMDPB58UPE?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the package type of the PMDPB58UPE?

    The PMDPB58UPE is housed in a leadless medium power DFN2020-6 (SOT1118) package.

  3. What is the typical threshold voltage (VGSth) for the PMDPB58UPE?

    The typical threshold voltage (VGSth) is -0.7 V.

  4. Is the PMDPB58UPE automotive qualified?

    No, the PMDPB58UPE is not automotive qualified.

  5. What is the maximum junction temperature (Tj) for the PMDPB58UPE?

    The maximum junction temperature (Tj) is 150°C.

  6. What is the typical gate-source capacitance (Ciss) for the PMDPB58UPE?

    The typical gate-source capacitance (Ciss) is 804 pF.

  7. What is the ESD protection rating for the PMDPB58UPE?

    The PMDPB58UPE has a 2 kV ElectroStatic Discharge (ESD) protection rating.

  8. What are some common applications for the PMDPB58UPE?

    Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  9. Where can I purchase the PMDPB58UPE?

    You can purchase the PMDPB58UPE from various distributors such as Mouser, Digi-Key, Arrow, and others listed on Nexperia’s website.

  10. Is there any technical support available for the PMDPB58UPE?

    Yes, technical support is available through Nexperia’s sales organization and their network of global and regional distributors.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.6A
Rds On (Max) @ Id, Vgs:67mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:804pF @ 10V
Power - Max:515mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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